Chuliá-Jordán Raquel, Juarez-Perez Emilio J
Instituto de Ciencia de los Materiales, Universitat de València, C/Catedrático J. Beltrán, 2, Paterna 46980, Spain.
ARAID Foundation, Instituto de Nanociencia y Materiales de Aragón (INMA), CSIC - Universidad de Zaragoza, Zaragoza 50009, Spain.
J Phys Chem C Nanomater Interfaces. 2022 Feb 24;126(7):3466-3474. doi: 10.1021/acs.jpcc.1c08867. Epub 2022 Feb 15.
Time-correlated single photon counting has been conducted to gain further insights into the short photoluminescence lifetimes (nanosecond) of lead iodide perovskite (MAPbI) thin films (∼100 nm). We analyze three different morphologies, compact layer, isolated island, and connected large grain films, from 14 to 300 K using a laser excitation power of 370 nJ/cm. Lifetime fittings from the Generalized Berberan-Santos decay model range from 0.5 to 6.5 ns, pointing to quasi-direct bandgap emission despite the three different sample strains. The high energy band emission for the isolated-island morphology shows fast recombination rate centers up to 4.8 ns, compared to the less than 2 ns for the other two morphologies, similar to that expected in a good quality single crystal of MAPbI. Low-temperature measurements on samples reflect a huge oscillator strength in this material where the free exciton recombination dominates, explaining the fast lifetimes, the low thermal excitation, and the thermal escape obtained.
已进行时间相关单光子计数,以进一步深入了解碘化铅钙钛矿(MAPbI)薄膜(约100纳米)的短光致发光寿命(纳秒级)。我们使用370 nJ/cm的激光激发功率,在14至300 K温度范围内分析了三种不同的形态,即致密层、孤立岛状和连通大晶粒薄膜。广义Berberan-Santos衰变模型的寿命拟合范围为0.5至6.5纳秒,这表明尽管有三种不同的样品应变,但仍为准直接带隙发射。孤立岛状形态的高能带发射显示出高达4.8纳秒的快速复合率中心,而其他两种形态的复合率中心小于2纳秒,这与高质量MAPbI单晶中的预期情况相似。对样品的低温测量反映出这种材料具有巨大的振子强度,其中自由激子复合占主导,这解释了快速的寿命、低的热激发以及所获得的热逃逸现象。