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keV离子在两个绝缘平行板之间的引导。

Guiding of keV ions between two insulating parallel plates.

作者信息

DuBois R D, Tőkési K, Giglio E

机构信息

Missouri University of Science and Technology, Rolla, MO, 65409, USA.

Institute for Nuclear Research (ATOMKI), Debrecen, Hungary.

出版信息

Sci Rep. 2022 Mar 7;12(1):3980. doi: 10.1038/s41598-022-07905-x.

Abstract

Experimental data are presented for low-energy singly charged ion transport between two insulating parallel plates. Using a beam intensity of approximately 20 pA, measurements of the incoming and transmitted beams provide quantitative temporal information about the charge deposited on the plates and the guiding probability. Using a smaller beam intensity (~ 1 pA) plate charging and discharging properties were studied as a function of time. These data imply that both the charge deposition and decay along the surface and through the bulk need to be modeled as acting independently. A further reduction of beam intensity to ~ 25 fA allowed temporal imaging studies of the positions and intensities of the guided beam plus two bypass beams to be performed. SIMION software was used to simulate trajectories of the guided and bypass beams, to provide information about the amount and location of deposited charge and, as a function of charge patch voltage, the probability of beam guiding and how much the bypass beams are deflected plus to provide information about the electric fields. An equivalent electric circuit model of the parallel plates, used to associate the deposited charge with the patch voltage implies that the deposited charge is distributed primarily on the inner surface of the plates, transverse to the beam direction, rather than being distributed throughout the entire plate.

摘要

本文给出了低能单电荷离子在两个绝缘平行板之间传输的实验数据。使用约20 pA的束流强度,对入射束和透射束的测量提供了关于沉积在极板上的电荷和引导概率的定量时间信息。使用较小的束流强度(1 pA),研究了极板充电和放电特性随时间的变化。这些数据表明,沿表面和通过本体的电荷沉积和衰减都需要建模为独立作用。将束流强度进一步降低至25 fA,可以对引导束以及另外两束旁路束的位置和强度进行时间成像研究。使用SIMION软件模拟引导束和旁路束的轨迹,以提供有关沉积电荷的数量和位置的信息,以及作为电荷斑电压函数的束引导概率、旁路束的偏转程度,并提供有关电场的信息。用于将沉积电荷与斑电压相关联的平行板等效电路模型表明,沉积电荷主要分布在极板的内表面,垂直于束方向,而不是分布在整个极板上。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ae4c/8901676/9ffb0bef98fc/41598_2022_7905_Fig1_HTML.jpg

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