Yoo Su-Been, Yun Seong-Hun, Jo Ah-Jin, Cho Sang-Joon, Cho Haneol, Lee Jun-Ho, Ahn Byoung-Woon
Park Systems Corp., 109, Gwanggyo-ro, Yeongtong-gu, Suwon-si, 16229, South Korea.
Imec, Remisebosweg 1, 3001, Leuven, Belgium.
Appl Microsc. 2022 Mar 8;52(1):1. doi: 10.1186/s42649-022-00070-5.
As semiconductor device architecture develops, from planar field-effect transistors (FET) to FinFET and gate-all-around (GAA), there is an increased need to measure 3D structure sidewalls precisely. Here, we present a 3-Dimensional Atomic Force Microscope (3D-AFM), a powerful 3D metrology tool to measure the sidewall roughness (SWR) of vertical and undercut structures. First, we measured three different dies repeatedly to calculate reproducibility in die level. Reproducible results were derived with a relative standard deviation under 2%. Second, we measured 13 different dies, including the center and edge of the wafer, to analyze SWR distribution in wafer level and reliable results were measured. All analysis was performed using a novel algorithm, including auto flattening, sidewall detection, and SWR calculation. In addition, SWR automatic analysis software was implemented to reduce analysis time and to provide standard analysis. The results suggest that our 3D-AFM, based on the tilted Z scanner, will enable an advanced methodology for automated 3D measurement and analysis.
随着半导体器件架构从平面场效应晶体管（FET）发展到鳍式场效应晶体管（FinFET）和全栅环绕（GAA），精确测量三维结构侧壁的需求日益增加。在此，我们展示了一种三维原子力显微镜（3D-AFM），这是一种强大的三维计量工具，用于测量垂直和底切结构的侧壁粗糙度（SWR）。首先，我们对三个不同的芯片进行了多次测量，以计算芯片层面的可重复性。得出的可重复结果的相对标准偏差低于2%。其次，我们测量了13个不同的芯片，包括晶圆的中心和边缘，以分析晶圆层面的SWR分布，并获得了可靠的测量结果。所有分析均使用一种新颖的算法进行，包括自动平面化、侧壁检测和SWR计算。此外，还实施了SWR自动分析软件，以减少分析时间并提供标准分析。结果表明，我们基于倾斜Z扫描器的3D-AFM将实现一种先进的自动三维测量和分析方法。
