Kakimoto Koichi, Liu Xin, Nakano Satoshi
Research Institute for Applied Mechanics (RIAM), Kyushu University, Fukuoka 816-8580, Japan.
Materials (Basel). 2022 Mar 1;15(5):1843. doi: 10.3390/ma15051843.
Impurity concentrations of oxygen, carbon, nitrogen, iron, and other heavy metals should be well controlled in silicon crystals to maintain the crystal quality for application in electronic and solar cell devices. Contamination by impurities occurs during the melting of raw materials and during the crystal growth process. Quantitative analysis of impurity transfer using numerical and experimental analysis is important to control impurity concentrations. This paper reviews the analysis of the impurity transport phenomena in crystal growth furnaces of Czochralski and directional solidification methods by a model of global analysis and an experiment during the crystal growth of silicon.
为保持晶体质量以应用于电子和太阳能电池器件，应严格控制硅晶体中氧、碳、氮、铁及其他重金属的杂质浓度。杂质污染发生在原材料熔化和晶体生长过程中。利用数值分析和实验分析对杂质传输进行定量分析，对于控制杂质浓度至关重要。本文通过全局分析模型和硅晶体生长过程中的实验，综述了提拉法和定向凝固法晶体生长炉中杂质传输现象的分析。
