Ansari Dezfoli Amir Reza, Adabavazeh Zary
Department of Intelligent Automation Engineering, National Chin-Yi University of Technology, Taichung, Taiwan.
Heliyon. 2024 Apr 6;10(8):e29346. doi: 10.1016/j.heliyon.2024.e29346. eCollection 2024 Apr 30.
During silicon crystal growth, oxygen, a well-known major impurity, affects the final silicon wafer's mechanical and electrical properties. This study focused on regulation of discharge of different concentrations of oxygen from the quartz crucible into the silicon melt while considering the crucible angular speed and the friction at the melt-crucible interface. The three-dimensional transient governing equations for heat transfer, fluid flow, and impurity transportation in the Czochralski (CZ) puller were solved numerically. The oxygen solvation equation representing the crucible to silicon melt was modified to evaluate the accuracy of oxygen concentration calculations during the CZ process. Experimental measurements using the Fourier-transform infrared (FTIR) technique were used to confirm the simulation results. The results demonstrate that the crucible angular speed affects the oxygen concentration near the crucible wall and therefore in the silicon ingot. The proposed modifications for evaluating oxygen concentration offer a more comprehensive understanding of the oxygen dynamics during the CZ crystal growth.
在硅晶体生长过程中，氧作为一种众所周知的主要杂质，会影响最终硅片的机械和电学性能。本研究着重于在考虑坩埚角速度和熔体 - 坩埚界面摩擦力的情况下，调节不同浓度的氧从石英坩埚向硅熔体中的释放。对提拉法（CZ）拉晶炉中传热、流体流动和杂质传输的三维瞬态控制方程进行了数值求解。对表示坩埚到硅熔体的氧溶解方程进行了修正，以评估CZ过程中氧浓度计算的准确性。使用傅里叶变换红外（FTIR）技术进行的实验测量用于验证模拟结果。结果表明，坩埚角速度会影响坩埚壁附近以及因此硅锭中的氧浓度。所提出的用于评估氧浓度的修正方法，能更全面地理解CZ晶体生长过程中的氧动力学。
