Chaoudhary Savita, Dewasi Avijit, S Ram Prakash, Rastogi Vipul, Pereira Rui N, Sinopoli Alessandro, Aïssa Brahim, Mitra Anirban
Department of Physics, Indian Institute of Technology Roorkee, Roorkee-247667, Uttarakhand, India.
Institute for Plasma Research, Gandhinagar-382428, Bhat, Gujarat, India.
Nanotechnology. 2022 Mar 30;33(25). doi: 10.1088/1361-6528/ac5ca6.
We report on the optoelectronic characteristics of-NiO/-Si heterojunction photodiode for broadband photodetection, fabricated by depositing a-type NiO thin film onto a commercial-type silicon substrate using pulsed laser deposition (PLD) technique. The structural properties of the PLD-grown-NiO material were analysed by means of x-ray diffraction and x-ray photoelectron spectroscopy, confirming its crystalline nature and revealing the presence of Ni vacancies, respectively. Hall measurements confirmed the-type semiconducting nature of the NiO thin film having a carrier concentration of 8.4 × 10cm. The current-voltage () characteristics of the-NiO/-Si heterojunction photodevice were investigated under different wavelengths ranging from UV to NIR. The self-bias properties under different illuminations of light were also explored systematically. Under self-bias condition, the photodiode exhibits excellent responsivities of 12.5 mA W, 24.6 mA Wand 30.8 mA Wwith illumination under 365 nm, 485 nm, and 850 nm light, respectively. In addition, the time dependency of the photoresponse of the fabricated photodevice has also been investigated and discussed thoroughly.
我们报道了通过脉冲激光沉积（PLD）技术在商用型硅衬底上沉积α型NiO薄膜制备的用于宽带光电探测的-NiO/-Si异质结光电二极管的光电特性。通过X射线衍射和X射线光电子能谱分析了PLD生长的-NiO材料的结构特性，分别证实了其晶体性质并揭示了Ni空位的存在。霍尔测量证实了NiO薄膜的α型半导体性质，其载流子浓度为8.4×10cm。在从紫外到近红外的不同波长下研究了-NiO/-Si异质结光电器件的电流-电压（）特性。还系统地探索了在不同光照下的自偏置特性。在自偏置条件下，光电二极管在365nm、485nm和850nm光照下分别表现出12.5mA W、24.6mA W和30.8mA W的优异响应度。此外，还对制备的光电器件的光响应的时间依赖性进行了深入研究和讨论。
