Sahoo Mihir Ranjan, Ray Avijeet, Singh Nirpendra
Harish-Chandra Research Institute, Prayagraj 211019, India.
Department of Physics, Indian Institute of Technology Roorkee, Roorkee 247667, India.
ACS Omega. 2022 Feb 24;7(9):7837-7844. doi: 10.1021/acsomega.1c06730. eCollection 2022 Mar 8.
Catalytically active sites at the basal plane of two-dimensional monolayers for hydrogen evolution reaction (HER) are important for the mass production of hydrogen. The structural, electronic, and catalytic properties of two-dimensional VGeN and NbGeN monolayers are demonstrated using the first-principles calculations. The dynamical stability is confirmed through phonon calculations, followed by computation of the electronic structure employing the hybrid functional HSE06 and PBE+. Here, we introduced two strategies, strain and doping, to tune their catalytic properties toward HER. Our results show that the HER activity of VGeN and NbGeN monolayers are sensitive to the applied strain. A 3% tensile strain results in the adsorption Gibbs free energy (Δ ) of hydrogen for the NbGeN monolayer of 0.015 eV, indicating better activity than Pt (-0.09 eV). At the compressive strain of 3%, the Δ value is -0.09 eV for the VGeN monolayer, which is comparable to that of Pt. The exchange current density for the P doping at the N site of the NbGeN monolayer makes it a promising electrocatalyst for HER (Δ = 0.11 eV). Our findings imply the great potential of the VGeN and NbGeN monolayers as electrocatalysts for HER activity.
二维单层基底平面上用于析氢反应(HER)的催化活性位点对于大规模制氢至关重要。利用第一性原理计算展示了二维VGeN和NbGeN单层的结构、电子和催化性质。通过声子计算确认了动力学稳定性,随后采用杂化泛函HSE06和PBE +计算电子结构。在此,我们引入了应变和掺杂两种策略来调节它们对HER的催化性质。我们的结果表明,VGeN和NbGeN单层的HER活性对施加的应变敏感。3%的拉伸应变导致NbGeN单层氢吸附吉布斯自由能(Δ )为0.015 eV,表明其活性优于Pt(-0.09 eV)。在3%的压缩应变下,VGeN单层的Δ 值为-0.09 eV,与Pt相当。NbGeN单层N位点P掺杂的交换电流密度使其成为一种有前景的HER电催化剂(Δ = 0.11 eV)。我们的发现暗示了VGeN和NbGeN单层作为HER活性电催化剂的巨大潜力。