Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P. R. China.
School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, P. R. China.
Science. 2020 Aug 7;369(6504):670-674. doi: 10.1126/science.abb7023.
Identifying two-dimensional layered materials in the monolayer limit has led to discoveries of numerous new phenomena and unusual properties. We introduced elemental silicon during chemical vapor deposition growth of nonlayered molybdenum nitride to passivate its surface, which enabled the growth of centimeter-scale monolayer films of MoSiN This monolayer was built up by septuple atomic layers of N-Si-N-Mo-N-Si-N, which can be viewed as a MoN layer sandwiched between two Si-N bilayers. This material exhibited semiconducting behavior (bandgap 1.94 electron volts), high strength (66 gigapascals), and excellent ambient stability. Density functional theory calculations predict a large family of such monolayer structured two-dimensional layered materials, including semiconductors, metals, and magnetic half-metals.
在单层极限中识别二维层状材料导致了许多新现象和异常性质的发现。我们在非层状氮化钼的化学气相沉积生长过程中引入元素硅来钝化其表面，这使得厘米级的 MoSiN 单层薄膜得以生长。该单层由七重原子层 N-Si-N-Mo-N-Si-N 组成，可以看作是夹在两层 Si-N 层之间的 MoN 层。这种材料表现出半导体行为（带隙约为 1.94 电子伏特）、高强度（约 660 吉帕斯卡）和出色的环境稳定性。密度泛函理论计算预测了一大类这种二维层状结构的单层材料，包括半导体、金属和磁性半金属。
