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具有新兴拓扑、磁性和超导特性的MAZ族层状范德华材料的插层结构。

Intercalated architecture of MAZ family layered van der Waals materials with emerging topological, magnetic and superconducting properties.

作者信息

Wang Lei, Shi Yongpeng, Liu Mingfeng, Zhang Ao, Hong Yi-Lun, Li Ronghan, Gao Qiang, Chen Mingxing, Ren Wencai, Cheng Hui-Ming, Li Yiyi, Chen Xing-Qiu

机构信息

Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, People's Republic of China.

School of Materials Science and Engineering, University of Science and Technology of China, 110016, Shenyang, People's Republic of China.

出版信息

Nat Commun. 2021 Apr 21;12(1):2361. doi: 10.1038/s41467-021-22324-8.

Abstract

The search for new two-dimensional monolayers with diverse electronic properties has attracted growing interest in recent years. Here, we present an approach to construct MAZ monolayers with a septuple-atomic-layer structure, that is, intercalating a MoS-type monolayer MZ into an InSe-type monolayer AZ. We illustrate this unique strategy by means of first-principles calculations, which not only reproduce the structures of MoSiN and MnBiTe that were already experimentally synthesized, but also predict 72 compounds that are thermodynamically and dynamically stable. Such an intercalated architecture significantly reconstructs the band structures of the constituents MZ and AZ, leading to diverse electronic properties for MAZ, which can be classified according to the total number of valence electrons. The systems with 32 and 34 valence electrons are mostly semiconductors. Whereas, those with 33 valence electrons can be nonmagnetic metals or ferromagnetic semiconductors. In particular, we find that, among the predicted compounds, (Ca,Sr)GaTe are topologically nontrivial by both the standard density functional theory and hybrid functional calculations. While VSiP is a ferromagnetic semiconductor and TaSiN is a type-I Ising superconductor. Moreover, WSiP is a direct gap semiconductor with peculiar spin-valley properties, which are robust against interlayer interactions. Our study thus provides an effective way of designing septuple-atomic-layer MAZ with unusual electronic properties to draw immediate experimental interest.

摘要

近年来,寻找具有多样电子性质的新型二维单原子层引起了越来越多的关注。在此,我们提出一种构建具有七层原子层结构的MAZ单原子层的方法,即将MoS型单原子层MZ插入InSe型单原子层AZ中。我们通过第一性原理计算说明了这一独特策略,该计算不仅重现了已通过实验合成的MoSiN和MnBiTe的结构,还预测了72种在热力学和动力学上稳定的化合物。这种插入式结构显著重构了组成部分MZ和AZ的能带结构,导致MAZ具有多样的电子性质,可根据价电子总数进行分类。具有32和34个价电子的体系大多是半导体。而具有33个价电子的体系可以是非磁性金属或铁磁半导体。特别地,我们发现,在预测的化合物中,通过标准密度泛函理论和杂化泛函计算,(Ca,Sr)GaTe具有非平凡拓扑性质。而VSiP是铁磁半导体,TaSiN是I型伊辛超导体。此外,WSiP是具有奇特自旋谷性质的直接带隙半导体,其性质对层间相互作用具有鲁棒性。因此,我们的研究提供了一种设计具有异常电子性质的七层原子层MAZ的有效方法,有望立即引起实验关注。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/53f2/8060390/3dbc8a7f3092/41467_2021_22324_Fig1_HTML.jpg

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