Rivasto E, Huhtinen H, Hynninen T, Paturi P
Department of Physics and Astronomy, Wihuri Physical Laboratory, University of Turku, 20014 Turku, Finland.
University of Turku Graduate School (UTUGS), University of Turku, 20014 Turku, Finland.
J Phys Condens Matter. 2022 Apr 5;34(23). doi: 10.1088/1361-648X/ac5e78.
We introduce a molecular dynamics based simulation model that enables the efficient optimization of complex pinning structures in unpresented wide magnetic field and angular ranges for high-temperature superconductor applications. The fully three-dimensional simulation allows the modeling of the critical current and the associated anisotropy in the presence of any kinds of defects despite their size and orientation. Most prominently, these include artificial defects such as nanorods along with intrinsic weak-links or-plane oriented stacking faults, for example. In this work, we present and analyze the most fundamental results of the simulation model and compare them indirectly with a wide range of previous experimental and computational observations. With the provided validation for the proposed simulation model, we consider it to be an extremely useful tool in particular for pushing the limits of ampacity in the coated conductor industry.
我们引入了一种基于分子动力学的模拟模型，该模型能够在未呈现的宽磁场和角度范围内高效优化复杂的钉扎结构，以用于高温超导应用。全三维模拟允许在存在任何类型缺陷（无论其尺寸和取向如何）的情况下对临界电流和相关各向异性进行建模。最显著的是，这些缺陷包括人造缺陷，例如纳米棒，以及本征弱连接或面内取向的堆垛层错等。在这项工作中，我们展示并分析了模拟模型的最基本结果，并将它们与之前广泛的实验和计算观察结果进行间接比较。通过对所提出的模拟模型进行验证，我们认为它是一种极其有用的工具，特别是对于突破涂层导体行业载流量的极限而言。
