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通过镍掺杂将氧化镧调制成高离子电导率。

Tuning LaO to high ionic conductivity by Ni-doping.

作者信息

Wang Faze, Hu Enyi, Wang Jun, Yu Lei, Hong Soonpa, Kim Jung-Sik, Zhu Bin

机构信息

Jiangsu Provincial Key Laboratory of Solar Energy Science and Technology, School of Energy & Environment, Southeast University, Nanjing, 210096, China.

Nanjing SolarU Energy Saving Technology Co., Ltd, Nanjing 210096, China.

出版信息

Chem Commun (Camb). 2022 Mar 31;58(27):4360-4363. doi: 10.1039/d1cc07183a.

DOI:10.1039/d1cc07183a
PMID:35296873
Abstract

Ni-doped LaO was developed as an ionic conducting membrane corresponding to a conductivity of 0.187 S cm at 550 °C. A peak power density of 970 mW cm with an open circuit voltage of 1.05 V was achieved using 10 mol% Ni-doped LaO (10NLO). XPS and Raman investigations reveal that the performance enhancement is due to the high concentration of oxygen vacancies. Density functional theory calculations verify that Ni doping can tune the band structure of LaO to enhance its electrochemical performance. A Schottky junction barrier is formed at the anode to avoid short circuit problems and facilitate the ionic transportation at the anode/electrolyte interface. This study indicates that wide-band gap semiconductors with suitable element-doping can be tuned to be promising ionic conductors for advanced fuel cell applications.

摘要

掺镍的氧化镧被开发为一种离子导电膜,在550℃时其电导率为0.187 S/cm。使用10mol%掺镍的氧化镧(10NLO)实现了970 mW/cm²的峰值功率密度和1.05 V的开路电压。X射线光电子能谱(XPS)和拉曼光谱研究表明,性能的提升归因于高浓度的氧空位。密度泛函理论计算证实,镍掺杂可以调节氧化镧的能带结构以增强其电化学性能。在阳极形成肖特基结势垒以避免短路问题,并促进阳极/电解质界面处的离子传输。这项研究表明,具有合适元素掺杂的宽带隙半导体可以被调控成为用于先进燃料电池应用的有前景的离子导体。

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