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具有在倍频程频率范围内单模传播特性的中红外绝缘体上硅波导。

Mid-infrared silicon-on-insulator waveguides with single-mode propagation over an octave of frequency.

作者信息

Stirling Callum J, Cao Wei, Reynolds Jamie D, Qu Zhibo, Bradley Thomas D, Mastronardi Lorenzo, Gardes Frederic Y, Nedeljkovic Milos

出版信息

Opt Express. 2022 Mar 14;30(6):8560-8570. doi: 10.1364/OE.448284.

DOI:10.1364/OE.448284
PMID:35299307
Abstract

Increasing the working optical bandwidth of a photonic circuit is important for many applications, in particular chemical sensing at mid-infrared wavelengths. This useful bandwidth is not only limited by the transparency range of waveguide materials, but also the range over which a waveguide is single or multimoded for predictable circuit behaviour. In this work, we show the first experimental demonstration of "endlessly single-mode" waveguiding in silicon photonics. Silicon-on-insulator waveguides were designed, fabricated and characterised at 1.95 µm and 3.80 µm. The waveguides were shown to support low-loss propagation (1.46 ± 0.13 dB/cm loss at 1.95 µm and 1.55 ± 0.35 dB/cm at 3.80 µm) and single-mode propagation was confirmed at 1.95 µm, meaning that only the fundamental mode was present over the wavelength range 1.95 - 3.80 µm. We also present the prospects for the use of these waveguides in sensing applications.

摘要

增加光子电路的工作光学带宽对于许多应用都很重要,特别是在中红外波长的化学传感方面。这个有用的带宽不仅受到波导材料透明范围的限制,还受到波导为实现可预测电路行为而保持单模或多模的范围的限制。在这项工作中,我们展示了硅光子学中“无限单模”波导的首次实验演示。设计、制造并在1.95微米和3.80微米波长下对绝缘体上硅波导进行了表征。这些波导被证明能够支持低损耗传播(在1.95微米波长下损耗为1.46±0.13分贝/厘米,在3.80微米波长下为1.55±0.35分贝/厘米),并且在1.95微米波长下确认了单模传播,这意味着在1.95 - 3.80微米波长范围内仅存在基模。我们还展示了这些波导在传感应用中的使用前景。

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