Cha Seokjun, Cho Yujang, Kim Jong Gyeong, Choi Hyeongsub, Ahn Dahye, Sun Jingzhe, Kang Dong-Soo, Pak Chanho, Park Jong-Jin
Department of Polymer Science and Engineering, Chonnam National University, Gwangju, 61186, Republic of Korea.
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea.
Small Methods. 2022 May;6(5):e2101545. doi: 10.1002/smtd.202101545. Epub 2022 Mar 24.
As a method to maximize the energy efficiency of triboelectric nanogenerators (TENGs), high-voltage charge injection (HVCI) on the surface is a simple and effective method for increasing surface charge densities. In this study, positive and negative triboelectric series are controlled using a 3-layer gradient charge-confinement wherein the particle sizes of the mesoporous carbon spheres (mCSs) are sequentially arranged depending on the external surface area of the mCSs. In the gradient charge-confinement layers of this study, the mCS with different sizes perform charge transport from the surface to a deep position during HVCI while mitigating the charge loss through charge confinement to induce the high space charge densities. Through this process, the output voltage-which is initially 15.2 V-is measured to be 600 V after HVCI, thus representing an increase of about 40 times. Further, to amplify the low output current, which is a disadvantage of triboelectric energy, two types of electrical energy-triboelectric and electromagnetic energy-are produced in single mechanical motion. As a result, the output current produced by the cylindrical TENG and electromagnetic generator is recorded as being 1300 times higher, increasing from 12.8 µA to 17.5 mA.
作为一种使摩擦纳米发电机(TENGs)能量效率最大化的方法,表面高压电荷注入(HVCI)是提高表面电荷密度的一种简单有效的方法。在本研究中,利用三层梯度电荷限制来控制正、负摩擦电序列,其中介孔碳球(mCSs)的粒径根据mCSs的外表面积依次排列。在本研究的梯度电荷限制层中,不同尺寸的mCS在HVCI过程中进行电荷从表面到深处的传输,同时通过电荷限制减轻电荷损失,以诱导高空间电荷密度。通过这个过程,最初为15.2 V的输出电压在HVCI后测量为600 V,因此增加了约40倍。此外,为了放大摩擦电能量的缺点——低输出电流,在单次机械运动中产生了两种电能——摩擦电和电磁能。结果,圆柱形TENG和电磁发电机产生的输出电流记录为高出1300倍,从12.8 µA增加到17.5 mA。