Liu Zhenmin, Chen Na, Liu Yong, Chen Zhenyi, Pang Fufei, Wang Tingyun
The Key Laboratory of Specialty Fiber Optics and Optical Access Networks, Joint International Research Laboratory of Specialty Fiber Optics and Advanced Communication, Shanghai University, Shanghai 200444, China.
Micromachines (Basel). 2022 Mar 18;13(3):463. doi: 10.3390/mi13030463.
When a high-power radio frequency (RF) metal oxide semiconductor field effect transistor (MOSFET) works in low-efficiency situations, considerable power is dissipated into heat, resulting in an excessive junction temperature and a likely failure. In this study, an optical fiber Bragg grating (FBG) sensor is installed on the die of a high-power RF MOSFET. The temperature change of RF MOSFET with the change of input signal is obtained by using the temperature frequency shift characteristic of the FBG reflected signal. Furthermore, the fast and repetitive capture of junction temperature by FBG reveals details of the temperature variation within each RF pulse, which is correctly correlated with input signals. The results show that besides monitoring the temperature accumulation of the chip for a long time, the FBG can also capture junction temperature details of the chip within each pulse period. Finally, a Cauer-type thermal model of the RF MOSFET was constructed based on the temperature information captured by the FBG.
当一个高功率射频（RF）金属氧化物半导体场效应晶体管（MOSFET）在低效情况下工作时，相当多的功率会 dissipated 为热量，导致结温过高并可能发生故障。在本研究中，一个光纤布拉格光栅（FBG）传感器被安装在一个高功率RF MOSFET的管芯上。通过利用FBG反射信号的温度频移特性，获得了RF MOSFET随输入信号变化的温度变化。此外，FBG对结温的快速重复捕获揭示了每个RF脉冲内温度变化的细节，这些细节与输入信号正确相关。结果表明，FBG除了可以长时间监测芯片的温度积累外，还可以捕获每个脉冲周期内芯片的结温细节。最后，基于FBG捕获的温度信息构建了RF MOSFET的考尔型热模型。
