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光电 InO 晶体管阵列模拟人工视觉适应。

Artificial Vision Adaption Mimicked by an Optoelectrical InO Transistor Array.

机构信息

Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China.

Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China.

出版信息

Nano Lett. 2022 Apr 27;22(8):3372-3379. doi: 10.1021/acs.nanolett.2c00599. Epub 2022 Mar 28.

Abstract

Simulation of biological visual perception has gained considerable attention. In this paper, an optoelectrical InO transistor array with a negative photoconductivity behavior is designed using a side-gate structure and a screen-printed ion-gel as the gate insulator. This paper is the first to observe a negative photoconductivity in electrolyte-gated oxide devices. Furthermore, an artificial visual perception system capable of self-adapting to environmental lightness is mimicked using the proposed device array. The transistor device array shows a self-adaptive behavior of light under different levels of light intensity, successfully demonstrating the visual adaption with an adjustable threshold range to the external environment. This study provides a new way to create an environmentally adaptive artificial visual perception system and has far-reaching significance for the future of neuromorphic electronics.

摘要

生物视觉感知的模拟已经引起了相当大的关注。在本文中,我们设计了一种具有负光电导特性的光电 InO 晶体管阵列,采用了侧栅结构和丝网印刷的离子凝胶作为栅极绝缘体。本文首次观察到电解质门控氧化物器件中的负光电导现象。此外,我们利用所提出的器件阵列模拟了一个能够自适应环境光亮度的人工视觉感知系统。晶体管器件阵列在不同光强下表现出对光的自适应行为,成功地演示了具有可调阈值范围的对外界环境的视觉适应。这项研究为创建环境自适应人工视觉感知系统提供了一种新方法,对神经形态电子学的未来具有深远的意义。

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