Frolova Lyubov A, Furmansky Yulia, Shestakov Alexander F, Emelianov Nikita A, Liddell Paul A, Gust Devens, Visoly-Fisher Iris, Troshin Pavel A
Institute for Problems of Chemical Physics of Russian Academy of Sciences,Semenov av. 1, Chernogolovka, Moscow Region 142432, Russia.
Yersin Department of Solar Energy & Environmental Physics, Blaustein Institutes for Desert Research, Ben-Gurion University of the Negev, Sede Boqer Campus, Midreshet Ben Gurion 8499000, Israel.
ACS Appl Mater Interfaces. 2022 Apr 6;14(13):15461-15467. doi: 10.1021/acsami.1c24979. Epub 2022 Mar 28.
Photo-switchable organic field-effect transistors (OFETs) represent an important platform for designing memory devices for a diverse array of products including security (brand-protection, copy-protection, keyless entry, etc.), credit cards, tickets, and multiple wearable organic electronics applications. Herein, we present a new concept by introducing self-assembled monolayers of donor-acceptor porphyrin-fullerene dyads as light-responsive triggers modulating the electrical characteristics of OFETs and thus pave the way to the development of advanced nonvolatile optical memory. The devices demonstrated wide memory windows, high programming speeds, and long retention times. Furthermore, we show a remarkable effect of the orientation of the fullerene-polymer dyads at the dielectric/semiconductor interface on the device behavior. In particular, the dyads anchored to the dielectric by the porphyrin part induced a reversible photoelectrical switching of OFETs, which is characteristic of flash memory elements. On the contrary, the devices utilizing the dyad anchored by the fullerene moiety demonstrated irreversible switching, thus operating as read-only memory (ROM). A mechanism explaining this behavior is proposed using theoretical DFT calculations. The results suggest the possibility of revisiting hundreds of known donor-acceptor dyads designed previously for artificial photosynthesis or other purposes as versatile optical triggers in advanced OFET-based multibit memory devices for emerging electronic applications.
光开关有机场效应晶体管（OFET）是设计多种产品存储设备的重要平台，这些产品包括安全领域（品牌保护、复制保护、无钥匙进入等）、信用卡、票据以及多种可穿戴有机电子应用。在此，我们提出了一个新概念，即引入供体-受体卟啉-富勒烯二元体系的自组装单分子层作为光响应触发器，来调节OFET的电学特性，从而为先进的非易失性光学存储器的开发铺平道路。这些器件展现出宽存储窗口、高编程速度和长保持时间。此外，我们还展示了富勒烯-聚合物二元体系在介电层/半导体界面的取向对器件行为有显著影响。特别是，通过卟啉部分锚定在介电层上的二元体系会引发OFET的可逆光电开关，这是闪存元件的特征。相反，利用由富勒烯部分锚定的二元体系的器件表现出不可逆开关，因此可作为只读存储器（ROM）工作。我们利用理论密度泛函理论（DFT）计算提出了一种解释这种行为的机制。结果表明，有可能重新审视数百种先前为人工光合作用或其他目的而设计的已知供体-受体二元体系，将其作为新兴电子应用中基于OFET的先进多位存储设备中的通用光学触发器。
