Aix-Marseille Université, CEA, CNRS, BIAM, 13108 Saint-Paul-lez-Durance, France.
Department of Plant and Microbial Biology, University of California, Berkeley, California 94720-3102, United States.
J Phys Chem B. 2022 Apr 14;126(14):2677-2687. doi: 10.1021/acs.jpcb.2c00752. Epub 2022 Apr 1.
Defining chemical properties of intracellular organelles is necessary to determine their function(s) as well as understand and mimic the reactions they host. However, the small size of bacterial and archaeal microorganisms often prevents defining local intracellular chemical conditions in a similar way to what has been established for eukaryotic organelles. This work proposes to use magnetite (FeO) nanocrystals contained in magnetosome organelles of magnetotactic bacteria as reporters of elemental composition, pH, and redox potential of a hypothetical environment at the site of formation of intracellular magnetite. This methodology requires combining recent single-cell mass spectrometry measurements together with elemental composition of magnetite in trace and minor elements. It enables a quantitative characterization of chemical disequilibria of 30 chemical elements between the intracellular and external media of magnetotactic bacteria, revealing strong transfers of elements with active influx or efflux processes that translate into elemental accumulation (Mo, Se, and Sn) or depletion (Sr and Bi) in the bacterial internal medium of up to seven orders of magnitude relative to the extracellular medium. Using this concept, we show that chemical conditions in magnetosomes are compatible with a pH of 7.5-9.5 and a redox potential of -0.25 to -0.6 V.
定义细胞内细胞器的化学性质对于确定其功能以及理解和模拟它们所承载的反应是必要的。然而,细菌和古菌微生物的体积较小,通常无法像对真核细胞器那样,确定其局部细胞内化学条件。这项工作提出使用磁小体细胞器中的磁铁矿 (FeO) 纳米晶体作为元素组成、pH 值和氧化还原电位的报告器,来推断细胞内磁铁矿形成部位的假设环境的局部化学条件。这种方法需要将最近的单细胞质谱测量结果与痕量和微量元素中的磁铁矿元素组成结合起来。它可以定量描述磁细菌细胞内和细胞外介质之间 30 种化学元素的化学不平衡,揭示了具有主动流入或流出过程的元素的强烈转移,这些过程导致元素在细菌内部介质中的积累(Mo、Se 和 Sn)或耗尽(Sr 和 Bi),其积累或耗尽的程度相对于细胞外介质高达七个数量级。使用这个概念,我们表明磁小体中的化学条件与 pH 值为 7.5-9.5 和氧化还原电位为-0.25 至-0.6 V 兼容。