Feng Wei, Wei Shuting, Zheng Yonghui, Wang Chang, Cao Juncheng
School of Physics and Electronic Engineering, Jiangsu University, 301 Xuefu Road, Zhenjiang 212013, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
Nanomaterials (Basel). 2022 Mar 28;12(7):1114. doi: 10.3390/nano12071114.
We propose a terahertz frequency multiplier based on high order harmonic generation in a GaAs-based miniband superlattice driven by an electric field. The performance of the frequency multiplier is analyzed using the balance equation approach, which incorporates momentum and energy relaxation processes at different lattice temperatures. It is found that the generated high-order harmonic power is sensitive to temperature changes. The peak power appears around resonance between driving terahertz frequency and intrinsic Bloch frequency. In the presence of the magnetic field, the peak power shifts towards a stronger static electric field region. The simulated results about the dependence of the second and third harmonic powers on a DC electric field are in qualitative consistence with the experiments. The proposed terahertz frequency multiplier based on semiconductor superlattice, being compact and efficient, is provided as a good candidate for terahertz wave generation.
我们提出了一种基于电场驱动的砷化镓基微带超晶格中高阶谐波产生的太赫兹倍频器。利用平衡方程方法分析了倍频器的性能，该方法考虑了不同晶格温度下的动量和能量弛豫过程。研究发现，产生的高阶谐波功率对温度变化敏感。峰值功率出现在驱动太赫兹频率与本征布洛赫频率之间的共振附近。在存在磁场的情况下，峰值功率向更强的静电场区域移动。关于二次谐波和三次谐波功率对直流电场依赖性的模拟结果与实验定性一致。所提出的基于半导体超晶格的太赫兹倍频器紧凑高效，是太赫兹波产生的良好候选方案。
