• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

偏置半导体超晶格中的谐波产生

Harmonic Generation in Biased Semiconductor Superlattices.

作者信息

Pereira Mauro Fernandes

机构信息

Department of Physics, Khalifa University of Science and Technology, Abu Dhabi 127788, United Arab Emirates.

Institute of Physics, Czech Academy of Sciences, 18221 Prague, Czech Republic.

出版信息

Nanomaterials (Basel). 2022 Apr 28;12(9):1504. doi: 10.3390/nano12091504.

DOI:10.3390/nano12091504
PMID:35564213
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9103809/
Abstract

Semiconductor superlattices are proven nanomaterials for THz nonlinear optics by means of high order harmonic generation. Seminal approaches leading to a perfectly antisymmetric current-voltage (I-V.) curve predict the generation of odd harmonics only in the absence of a bias. However, even harmonics at high orders have been detected in several experiments. Their generation has been explained by considering deviations from the current flow symmetry that break the exact antisymmetry of the I-V. curve. In this paper, we focus on another issue found experimentally that has also not been explained, namely the harmonic power output asymmetry from negative to positive applied bias. Once more, breaking the I-V. flow symmetry explains the experiments and leads to a further tool to design the power output of these materials. Furthermore, a new approach for the Boltzmann Equation under relaxation-rate approximation eliminates numerical difficulties generated by a previous theory. This leads to very efficient analytical expressions that can be used for both fundamental physics/optics/material sciences and realistic device development and simulations.

摘要

半导体超晶格通过高次谐波产生被证明是用于太赫兹非线性光学的纳米材料。导致完美反对称电流 - 电压(I - V)曲线的开创性方法预测,仅在无偏置的情况下才会产生奇次谐波。然而,在几个实验中已经检测到了高阶偶次谐波。通过考虑与电流流动对称性的偏差来解释它们的产生,这种偏差打破了I - V曲线的精确反对称性。在本文中,我们关注实验中发现的另一个尚未得到解释的问题,即从负向正向施加偏置时谐波功率输出的不对称性。再次强调,打破I - V流动对称性解释了这些实验,并导致了一种设计这些材料功率输出的新工具。此外,在弛豫率近似下对玻尔兹曼方程的一种新方法消除了先前理论产生的数值困难。这导致了非常有效的解析表达式,可用于基础物理/光学/材料科学以及实际器件开发和模拟。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1237/9103809/622aac96ea9d/nanomaterials-12-01504-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1237/9103809/3660cad6f45c/nanomaterials-12-01504-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1237/9103809/03b2133e2787/nanomaterials-12-01504-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1237/9103809/a01dba9d1ad3/nanomaterials-12-01504-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1237/9103809/622aac96ea9d/nanomaterials-12-01504-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1237/9103809/3660cad6f45c/nanomaterials-12-01504-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1237/9103809/03b2133e2787/nanomaterials-12-01504-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1237/9103809/a01dba9d1ad3/nanomaterials-12-01504-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1237/9103809/622aac96ea9d/nanomaterials-12-01504-g001.jpg

相似文献

1
Harmonic Generation in Biased Semiconductor Superlattices.偏置半导体超晶格中的谐波产生
Nanomaterials (Basel). 2022 Apr 28;12(9):1504. doi: 10.3390/nano12091504.
2
Combined Structural and Voltage Control of Giant Nonlinearities in Semiconductor Superlattices.半导体超晶格中巨非线性的结构与电压联合控制
Nanomaterials (Basel). 2021 May 13;11(5):1287. doi: 10.3390/nano11051287.
3
Terahertz Second-Harmonic Generation from Lightwave Acceleration of Symmetry-Breaking Nonlinear Supercurrents.基于光波加速的对称性破缺非线性超电流产生太赫兹二次谐波。
Phys Rev Lett. 2020 May 22;124(20):207003. doi: 10.1103/PhysRevLett.124.207003.
4
Terahertz-assisted even harmonics generation in silicon.硅中太赫兹辅助的偶次谐波产生
iScience. 2022 Jan 7;25(2):103750. doi: 10.1016/j.isci.2022.103750. eCollection 2022 Feb 18.
5
Giant controllable gigahertz to terahertz nonlinearities in superlattices.超晶格中巨大的可控吉赫兹到太赫兹非线性效应
Sci Rep. 2020 Sep 29;10(1):15950. doi: 10.1038/s41598-020-72746-5.
6
Theoretical Analysis of Terahertz Frequency Multiplier Based on Semiconductor Superlattices.基于半导体超晶格的太赫兹倍频器的理论分析
Nanomaterials (Basel). 2022 Mar 28;12(7):1114. doi: 10.3390/nano12071114.
7
High-order harmonic generation from a thin film crystal perturbed by a quasi-static terahertz field.由受准静态太赫兹场扰动的薄膜晶体产生的高阶谐波。
Nat Commun. 2023 May 5;14(1):2603. doi: 10.1038/s41467-023-38187-0.
8
Extremely efficient terahertz high-harmonic generation in graphene by hot Dirac fermions.热狄拉克费米子在石墨烯中产生的超高效率太赫兹波段谐波。
Nature. 2018 Sep;561(7724):507-511. doi: 10.1038/s41586-018-0508-1. Epub 2018 Sep 10.
9
Heterostructure terahertz devices.异质结构太赫兹器件。
J Phys Condens Matter. 2008 Aug 19;20(38):380301. doi: 10.1088/0953-8984/20/38/380301. Epub 2008 Jul 7.
10
Rectification of terahertz radiation in semiconductor superlattices in the absence of domains.半导体超晶格中不存在畴时太赫兹辐射的校正。
J Phys Condens Matter. 2012 Apr 11;24(14):145303. doi: 10.1088/0953-8984/24/14/145303. Epub 2012 Mar 15.

引用本文的文献

1
Resonant Tunnelling and Intersubband Optical Properties of ZnO/ZnMgO Semiconductor Heterostructures: Impact of Doping and Layer Structure Variation.ZnO/ZnMgO半导体异质结构的共振隧穿和子带间光学性质:掺杂和层结构变化的影响
Materials (Basel). 2024 Feb 17;17(4):927. doi: 10.3390/ma17040927.
2
Coexistence of Bloch and Parametric Mechanisms of High-Frequency Gain in Doped Superlattices.掺杂超晶格中高频增益的布洛赫机制与参量机制的共存
Nanomaterials (Basel). 2023 Jul 1;13(13):1993. doi: 10.3390/nano13131993.
3
Photon Drag Currents and Terahertz Generation in α-Sn/Ge Quantum Wells.

本文引用的文献

1
Generation and Control of Terahertz Spin Currents in Topology-Induced 2D Ferromagnetic Fe GeTe |Bi Te Heterostructures.拓扑诱导二维铁磁体FeGeTe₂|Bi₂Te₃异质结构中太赫兹自旋电流的产生与控制
Adv Mater. 2022 Mar;34(9):e2106172. doi: 10.1002/adma.202106172. Epub 2022 Jan 5.
2
Combined Structural and Voltage Control of Giant Nonlinearities in Semiconductor Superlattices.半导体超晶格中巨非线性的结构与电压联合控制
Nanomaterials (Basel). 2021 May 13;11(5):1287. doi: 10.3390/nano11051287.
3
Perfect Impedance Matching with Meta-Surfaces Made of Ultra-Thin Metal Films: A Phenomenological Approach to the Ideal THz Sensors.
α-Sn/Ge量子阱中的光生载流子拖曳电流与太赫兹波产生
Nanomaterials (Basel). 2022 Aug 23;12(17):2892. doi: 10.3390/nano12172892.
利用超薄金属膜制成的超表面实现完美阻抗匹配:理想太赫兹传感器的唯象方法
Materials (Basel). 2020 Nov 28;13(23):5417. doi: 10.3390/ma13235417.
4
Giant controllable gigahertz to terahertz nonlinearities in superlattices.超晶格中巨大的可控吉赫兹到太赫兹非线性效应
Sci Rep. 2020 Sep 29;10(1):15950. doi: 10.1038/s41598-020-72746-5.
5
Optical Transistor for Amplification of Radiation in a Broadband Terahertz Domain.用于宽带太赫兹波段辐射放大的光晶体管
Phys Rev Lett. 2020 Feb 28;124(8):087701. doi: 10.1103/PhysRevLett.124.087701.
6
Analytical Expressions for Numerical Characterization of Semiconductors per Comparison with Luminescence.通过与发光比较对半导体进行数值表征的解析表达式。
Materials (Basel). 2017 Dec 21;11(1):2. doi: 10.3390/ma11010002.
7
Quantum cascade lasers: from tool to product.量子级联激光器:从工具到产品。
Opt Express. 2015 Apr 6;23(7):8462-75. doi: 10.1364/OE.23.008462.
8
High-resolution broadband terahertz spectroscopy via electronic heterodyne detection of photonically generated terahertz frequency comb.通过对光子产生的太赫兹频率梳进行电子外差检测实现高分辨率宽带太赫兹光谱学。
Opt Lett. 2014 Oct 1;39(19):5669-72. doi: 10.1364/OL.39.005669.
9
Wavelength scaling of terahertz generation by gas ionization.太赫兹波气体离化波长缩放。
Phys Rev Lett. 2013 Jun 21;110(25):253901. doi: 10.1103/PhysRevLett.110.253901. Epub 2013 Jun 17.
10
Coherent electric-field effects in semiconductors.半导体中的相干电场效应。
Phys Rev Lett. 1994 Aug 8;73(6):902-905. doi: 10.1103/PhysRevLett.73.902.