Li Donghao, Li Bin, Tang Bo, Zhang Peng, Yang Yan, Liu Ruonan, Xie Ling, Li Zhihua
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
University of Chinese Academy of Sciences, Beijing 100049, China.
Micromachines (Basel). 2022 Mar 31;13(4):559. doi: 10.3390/mi13040559.
Directional couplers, as power splitters, have provided a significant contribution for light splitting and combining in silicon photonics. However, the splitting ratio of conventional directional couplers is very sensitive to wavelength, which limits the bandwidth and the transmission performance of the devices. In this work, a silicon nitride bent directional coupler with large bandwidth, large fabrication tolerance, and low thermal sensitivity is proposed and demonstrated through simulation analysis and experiments. Moreover, the fabrication process of 400 nm thick silicon nitride photonic devices is described, which are compatible with complementary metal-oxide-semiconductor technology. The 1 dB bandwidth of the bent waveguide coupler can reach 80 nm, and the thermal sensitivity is reduced by 85% compared to the silicon-based devices.
定向耦合器作为功率分配器，在硅光子学中的光分裂和组合方面做出了重大贡献。然而，传统定向耦合器的分光比对波长非常敏感，这限制了器件的带宽和传输性能。在这项工作中，通过模拟分析和实验提出并展示了一种具有大带宽、大制造容差和低热灵敏度的氮化硅弯曲定向耦合器。此外，还描述了与互补金属氧化物半导体技术兼容的400纳米厚氮化硅光子器件的制造工艺。弯曲波导耦合器的1分贝带宽可达80纳米，与硅基器件相比，热灵敏度降低了85%。
