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通过硅离子注入实现的非对称定向耦合器中的模式转换修整

Mode Conversion Trimming in Asymmetric Directional Couplers Enabled by Silicon Ion Implantation.

作者信息

Xu Rongyang, Taheriniya Shabnam, Varri Akhil, Ulanov Mark, Konyshev Iurii, Krämer Linus, McRae Liam, Ebert Falk Leonard, Bankwitz Julian Rasmus, Ma Xinyu, Ferrari Simone, Bhaskaran Harish, Pernice Wolfram H P

机构信息

Kirchhoff-Institute for Physics, Heidelberg University, Im Neuenheimer Feld 227, 69120 Heidelberg, Germany.

Institute of Physics, University of Münster, Heisenbergstraße 11, 48149 Münster, Germany.

出版信息

Nano Lett. 2024 Sep 4;24(35):10813-10819. doi: 10.1021/acs.nanolett.4c02065. Epub 2024 Aug 20.

DOI:10.1021/acs.nanolett.4c02065
PMID:39164007
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11378285/
Abstract

An on-chip asymmetric directional coupler (DC) can convert fundamental modes to higher-order modes and is one of the core components of mode-division multiplexing (MDM) technology. In this study, we propose that waveguides of the asymmetric DC can be trimmed by silicon ion implantation to tune the effective refractive index and facilitate mode conversion into higher-order modes. Through this method of tuning, transmission changes of up to 18 dB have been realized with one ion implantation step. In addition, adjusting the position of the ion implantation on the waveguide can provide a further degree of control over the transmission into the resulting mode. The results of this work present a promising new route for the development of high-efficiency, low-loss mode converters for integrated photonic platforms, and aim to facilitate the application of MDM technology in emerging photonic neuromorphic computing.

摘要

片上非对称定向耦合器（DC）可以将基模转换为高阶模，是模分复用（MDM）技术的核心组件之一。在本研究中，我们提出可以通过硅离子注入对非对称DC的波导进行修整，以调整有效折射率，并促进向高阶模的模式转换。通过这种调谐方法，在一次离子注入步骤中实现了高达18 dB的传输变化。此外，调整离子注入在波导上的位置可以进一步控制向所得模式的传输。这项工作的结果为集成光子平台开发高效、低损耗模式转换器提供了一条有前景的新途径，旨在促进MDM技术在新兴光子神经形态计算中的应用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0893/11378285/976ae3ccc999/nl4c02065_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0893/11378285/fffa20cbde86/nl4c02065_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0893/11378285/bd7b42dc698d/nl4c02065_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0893/11378285/aec6b792982a/nl4c02065_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0893/11378285/d0f4ceac5ff3/nl4c02065_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0893/11378285/976ae3ccc999/nl4c02065_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0893/11378285/fffa20cbde86/nl4c02065_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0893/11378285/bd7b42dc698d/nl4c02065_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0893/11378285/aec6b792982a/nl4c02065_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0893/11378285/d0f4ceac5ff3/nl4c02065_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0893/11378285/976ae3ccc999/nl4c02065_0005.jpg

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本文引用的文献

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Scalable Non-Volatile Tuning of Photonic Computational Memories by Automated Silicon Ion Implantation.通过自动硅离子注入实现光子计算存储器的可扩展非易失性调谐
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