通过在1Mbit RRAM芯片中利用TaN界面层提高回流焊接能力。

Reflow Soldering Capability Improvement by Utilizing TaN Interfacial Layer in 1Mbit RRAM Chip.

作者信息

Yuan Peng, Dong Danian, Zheng Xu, Xing Guozhong, Xu Xiaoxin

机构信息

Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100190, China.

School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100029, China.

出版信息

Micromachines (Basel). 2022 Mar 31;13(4):567. doi: 10.3390/mi13040567.

DOI:10.3390/mi13040567

PMID:35457872

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9025100/

Abstract

We investigated the thermal stability of a 1Mbit OxRRAM array embedded in 28 nm COMS technology. A back-end-of-line (BEOL) solution with a TaN-Ta interfacial layer was proposed to eliminate the failure rate after reflow soldering assembly at 260 °C. By utilizing a TaN-Ta interfacial layer (IL), the oxygen defects in conductive filament were redistributed, and electromigration lifetimes of Cu-based damascene interconnects were improved, which contributed to optimization. This work provides a potential solution for the practical application of embedded RRAM beyond the 28 nm technology node.

摘要

我们研究了嵌入28纳米互补金属氧化物半导体（CMOS）技术中的1兆位氧化还原随机存取存储器（OxRRAM）阵列的热稳定性。提出了一种带有氮化钽-钽界面层的后端（BEOL）解决方案，以消除在260°C回流焊接组装后的故障率。通过使用氮化钽-钽界面层（IL），导电细丝中的氧缺陷得以重新分布，基于铜的镶嵌互连的电迁移寿命得到改善，这有助于实现优化。这项工作为28纳米技术节点以上嵌入式RRAM的实际应用提供了一种潜在的解决方案。