Wang Yongte, Liu Hongxia, Wang Xing, Zhao Lu
Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an, 710071, China.
Nanoscale Res Lett. 2019 Jul 9;14(1):224. doi: 10.1186/s11671-019-3064-1.
In this paper, the effects of Cu insertion layer and rapid thermal annealing on the resistive switching behaviors of La-based resistive switching access memory (RRAM) devices have been investigated. Compared with the undoped control sample (Cu/LaAlO/Pt), the Cu-embedded devices show higher device yield and reset stop voltage, which indicates that the reliability of La-based RRAM has been effectively improved. However, the unannealed Cu/LaAlO: Cu/Pt RRAM device still suffers from serious dispersion of parameters. It was proved that the RRAM device with Cu insertion layer and annealing treatment exhibits the best resistive switching characteristics such as low forming voltage, high on/off ratio and fine electrical uniformity. These improvements can be attributed to the diffusion of Cu atoms and the formation of Cu nanocrystals (Cu-NCs) after annealing process, since the diffused Cu atoms and the Cu-NCs could enhance the local electric field and weaken the randomness of the formation/rupture of conductive filaments.
本文研究了铜插入层和快速热退火对基于镧的电阻开关存取存储器（RRAM）器件电阻开关行为的影响。与未掺杂的对照样品（Cu/LaAlO/Pt）相比，嵌入铜的器件具有更高的器件成品率和复位停止电压，这表明基于镧的RRAM的可靠性得到了有效提高。然而，未退火的Cu/LaAlO:Cu/Pt RRAM器件仍然存在严重的参数分散问题。事实证明，经过铜插入层和退火处理的RRAM器件表现出最佳的电阻开关特性，如低形成电压、高开关比和良好的电学均匀性。这些改进可归因于退火过程后铜原子的扩散和铜纳米晶体（Cu-NCs）的形成，因为扩散的铜原子和Cu-NCs可以增强局部电场并减弱导电细丝形成/断裂的随机性。
