Qi Tao, Yu Yaolun, Hu Yanyan, Li Kangjie, Guo Nan, Jia Yi
Department of Communication Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
Qian Xuesen Laboratory of Space Technology, China Academy of Space Technology, Beijing 100094, China.
Nanomaterials (Basel). 2022 Apr 8;12(8):1258. doi: 10.3390/nano12081258.
In this research, we report on a high-performance near-infrared (near-IR) photodetector based on single-walled carbon nanotube-germanium (SWCNT-Ge) heterojunction by assembling SWCNT films onto n-type Ge substrate with ozone treatment. The ozone doping enhances the conductivity of carbon nanotube films and the formed interfacial oxide layer (GeO) suppresses the leakage current and carriers' recombination. The responsivity and detectivity in the near-IR region are estimated to be 362 mA W and 7.22 × 10 cm Hz W, respectively, which are three times the value of the untreated device. Moreover, a rapid response time of ~11 μs is obtained simultaneously. These results suggest that the simple SWCNT-Ge structure and ozone treatment method might be utilized to fabricate high-performance and low-cost near-IR photodetectors.
在本研究中，我们报道了一种基于单壁碳纳米管-锗（SWCNT-Ge）异质结的高性能近红外（near-IR）光电探测器，该探测器通过臭氧处理将SWCNT薄膜组装到n型锗衬底上制成。臭氧掺杂提高了碳纳米管薄膜的导电性，并且形成的界面氧化层（GeO）抑制了漏电流和载流子复合。近红外区域的响应度和探测率估计分别为362 mA/W和7.22×10¹² cm Hz¹/² W⁻¹，是未处理器件值的三倍。此外，同时获得了约11 μs的快速响应时间。这些结果表明，简单的SWCNT-Ge结构和臭氧处理方法可用于制造高性能、低成本的近红外光电探测器。
