Guo Xin, Wang Shuai, Yan Peiguang, Wang Jinzhang, Yu Linpeng, Liu Wenjun, Zheng Zhijian, Guo Chunyu, Ruan Shuangchen
Shenzhen Key Laboratory of Laser Engineering, Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
Key Laboratory of Advanced Optical Precision Manufacturing Technology of Guangdong Higher Education Institutes, Shenzhen Technology University, Shenzhen 518118, China.
Nanomaterials (Basel). 2022 Apr 13;12(8):1343. doi: 10.3390/nano12081343.
Two-dimensional (2D) materials show great promise as saturable absorbers (SAs) for ultrafast fiber lasers. However, the relatively low modulation depth and poor stability of some 2D materials, such as graphene and black phosphorus, restrict their applications in the mid-infrared pulse generation. Herein, we first report a novel 2D double transition metal carbide, denoted as MoTiCT MXene, as the saturable absorber (SA) for a passively Q-switched mid-infrared fiber laser. Due to the unique four-metal atomic layer structure, the MoTiCT exhibits superior saturable absorption properties, particularly with a higher modulation depth (40% at 2796 nm) than most of the other reported 2D SA materials. After incorporating the MXene SA with an erbium-doped fiber system, the passively Q-switched pulses were achieved with a repetition rate of 157.3 kHz, the shortest pulse width of 370 ns, and single-pulse energy of 1.92 μJ, respectively. Such results extend the MXene-based SAs as promising candidates for advanced photonic devices.
二维（2D）材料作为超快光纤激光器的可饱和吸收体（SA）显示出巨大的潜力。然而，一些二维材料，如石墨烯和黑磷，其相对较低的调制深度和较差的稳定性限制了它们在中红外脉冲产生中的应用。在此，我们首次报道了一种新型的二维双过渡金属碳化物，称为MoTiCT MXene，作为被动调Q中红外光纤激光器的可饱和吸收体（SA）。由于独特的四金属原子层结构，MoTiCT表现出优异的可饱和吸收特性，特别是与大多数其他报道的二维SA材料相比，具有更高的调制深度（在2796 nm处为40%）。将MXene SA与掺铒光纤系统相结合后，分别实现了重复频率为157.3 kHz、最短脉冲宽度为370 ns和单脉冲能量为1.92 μJ的被动调Q脉冲。这些结果扩展了基于MXene的SA作为先进光子器件的有前途的候选材料。
