调节BiVO-{010}晶面的暴露程度以增强氮光固定性能。

Chu Honghao, Zheng Shisheng, Li Yang, Xu Kuanda, Hong Qingshui, Li Tangyi, Ren Wenju, Li Shunning, Mei Zongwei, Pan Feng

School of Advanced Materials, Peking University, Shenzhen Graduate School Shenzhen China

Chongqing Key Laboratory of Chemical Process for Clean Energy and Resource Utilization, School of Chemistry and Engineering, Chongqing University Chongqing China.

RSC Adv. 2021 Aug 27;11(46):28908-28911. doi: 10.1039/d1ra02739e. eCollection 2021 Aug 23.

Effective separation of photoexcited carriers and chemisorption of the N molecule are two key issues to efficient nitrogen photofixation. The spatial charge separation of BiVO with anisotropic exposed facets, namely the transfer of photoexcited electrons and holes to {010} and {110} facets, respectively, helps to enhance the separation ability of photogenerated carriers. Theoretical calculation results predict that a surface oxygen vacancy is easier to form on the (010) facet than on the (110) facet of BiVO. Accordingly, in this study, enhanced N photofixation performance has been achieved for the first time by tuning the exposure of {010} facets of BiVO.

光激发载流子的有效分离和N分子的化学吸附是实现高效固氮的两个关键问题。具有各向异性暴露面的BiVO的空间电荷分离，即光激发电子和空穴分别转移到{010}面和{110}面，有助于提高光生载流子的分离能力。理论计算结果预测，BiVO的(010)面上比(110)面上更容易形成表面氧空位。因此，在本研究中，通过调控BiVO{010}面的暴露量，首次实现了增强的固氮性能。