Awol Nasir, Amente Chernet, Verma Gaurav, Kim Jung Yong
School of Materials Science and Engineering, Jimma Institute of Technology, Jimma University P. O. Box 378 Jimma Ethiopia
Dr Shanti Swarup Bhatnagar University Institute of Chemical Engineering and Technology, Panjab University Chandigarh 160014 India
RSC Adv. 2021 May 17;11(29):17789-17799. doi: 10.1039/d1ra02645c. eCollection 2021 May 13.
Organometal halide perovskite (CHNHPbI) semiconductors have been promising candidates as a photoactive layer for photovoltaics. Especially for high performance devices, the crystal structure and morphology of this perovskite layer should be optimized. In this experiment, by employing solvent-antisolvent vapor techniques during a modified sequential deposition of PbI-CHNHI layers, the morphology engineering was carried out as a function of antisolvent species such as: chloroform, chlorobenzene, dichlorobenzene, toluene, and diethyl ether. Then, the optical, morphological, structural, and surface properties were characterized. When dimethyl sulfoxide (DMSO, solvent) and diethyl ether (antisolvent) vapors were employed, the CHNHPbI layer exhibited relatively desirable crystal structures and morphologies, resulting in an optical bandgap ( ) of 1.61 eV, crystallite size () of 89.5 nm, and high photoluminescence (PL) intensity. Finally, the stability of perovskite films toward water was found to be dependent on the morphologies with defects such as grain boundaries, which was evaluated through contact angle measurement.
有机金属卤化物钙钛矿（CH₃NH₃PbI₃）半导体一直是很有前途的光伏光活性层候选材料。特别是对于高性能器件，这种钙钛矿层的晶体结构和形貌需要优化。在本实验中，通过在PbI₂ - CH₃NH₃I层的改进顺序沉积过程中采用溶剂 - 反溶剂气相技术，根据反溶剂种类（如氯仿、氯苯、二氯苯、甲苯和乙醚）进行形貌工程。然后，对光学、形貌、结构和表面性质进行了表征。当使用二甲基亚砜（DMSO，溶剂）和乙醚（反溶剂）蒸气时，CH₃NH₃PbI₃层表现出相对理想的晶体结构和形貌，导致光学带隙（Eg）为1.61 eV，微晶尺寸（D）为89.5 nm，以及高光致发光（PL）强度。最后，发现钙钛矿薄膜对水的稳定性取决于具有诸如晶界等缺陷的形貌，这通过接触角测量进行了评估。
