Yu Guanghui, Jiang Ke-Jian, Gu Wei-Min, Li Yawen, Lin Yuze, Xu Yanting, Jiao Xinning, Xue Tangyue, Zhang Yiqiang, Song Yanlin
Key Laboratory of Green Printing, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
College of Chemistry, Zhengzhou University, Zhengzhou, 450001, P. R. China.
Angew Chem Int Ed Engl. 2022 Jul 4;61(27):e202203778. doi: 10.1002/anie.202203778. Epub 2022 May 12.
Inorganic cesium lead iodide perovskite CsPbI is attracting great attention as a light absorber for single or multi-junction photovoltaics due to its outstanding thermal stability and proper band gap. However, the device performance of CsPbI -based perovskite solar cells (PSCs) is limited by the unsatisfactory crystal quality and thus severe non-radiative recombination. Here, vacuum-assisted thermal annealing (VATA) is demonstrated as an effective approach for controlling the morphology and crystallinity of the CsPbI perovskite films formed from the precursors of PbI , CsI, and dimethylammonium iodide (DMAI). By this method, a large-area and high-quality CsPbI film is obtained, exhibiting a much reduced trap-state density with prolonged charge lifetime. Consequently, the solar cell efficiency is raised from 17.26 to 20.06 %, along with enhanced stability. The VATA would be an effective approach for fabricating high-performance thin-film CsPbI perovskite optoelectronics.
无机铯铅碘化物钙钛矿CsPbI由于其出色的热稳定性和合适的带隙，作为单结或多结光伏的光吸收剂正引起广泛关注。然而，基于CsPbI的钙钛矿太阳能电池（PSC）的器件性能受到晶体质量不理想以及由此导致的严重非辐射复合的限制。在此，真空辅助热退火（VATA）被证明是一种有效的方法，可用于控制由PbI、CsI和碘化二甲基铵（DMAI）前驱体制备的CsPbI钙钛矿薄膜的形貌和结晶度。通过这种方法，获得了大面积高质量的CsPbI薄膜，其陷阱态密度大大降低，电荷寿命延长。因此，太阳能电池效率从17.26%提高到20.06%，同时稳定性增强。VATA将是制造高性能薄膜CsPbI钙钛矿光电器件的有效方法。
