Shahiduzzaman Md, Yonezawa Kyosuke, Yamamoto Kohei, Ripolles Teresa S, Karakawa Makoto, Kuwabara Takayuki, Takahashi Kohshin, Hayase Shuzi, Taima Tetsuya
Institute for Frontier Science Initiative (InFiniti), Graduate School of Natural Science and Technology, and Research Center for Sustainable Energy and Technology, Kanazawa University, Kakuma-machi, 920-1192 Kanazawa, Japan.
Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology, Kitakyushu, 808-0196 Fukuoka, Japan.
ACS Omega. 2017 Aug 11;2(8):4464-4469. doi: 10.1021/acsomega.7b00814. eCollection 2017 Aug 31.
Vacuum deposition is a simple and controllable approach that aims to form higher-quality perovskite films compared with those formed using solution-based deposition processes. Herein, we demonstrate a novel method to promote the intercalation control of inorganic cesium lead iodide (CsPbI) perovskite thin films via alternate vacuum deposition. We also investigated the effect of layer-by-layer deposition of PbI/CsI to fabricate efficient planar heterojunction CsPbI thin films and solar cells. This procedure is comparatively simple when compared with commonly used coevaporation techniques; further, precise intercalation control of the CsPbI thin films can be achieved by increasing the number of layers in the layer-by-layer deposition of PbI/CsI. The best control and the highest reproducibility were achieved for the deposition of four double layers owing to the precise intercalation control during the deposition of the CsPbI thin film. A power conversion efficiency of 6.79% was obtained via alternating vacuum deposition of two double layers with a short-circuit current density ( ) of 12.06 mA/cm, an open-circuit voltage ( ) of 0.79 V, and a fill factor (FF) of 0.72. Our results suggest a route for inorganic precursors to be used for efficient perovskite solar cells via alternating vacuum deposition.
真空沉积是一种简单且可控的方法,旨在形成比使用基于溶液的沉积工艺所形成的钙钛矿薄膜质量更高的薄膜。在此,我们展示了一种通过交替真空沉积来促进无机铯铅碘化物(CsPbI)钙钛矿薄膜的插层控制的新方法。我们还研究了PbI/CsI逐层沉积对制备高效平面异质结CsPbI薄膜和太阳能电池的影响。与常用的共蒸发技术相比,该过程相对简单;此外,通过增加PbI/CsI逐层沉积的层数,可以实现对CsPbI薄膜的精确插层控制。由于在CsPbI薄膜沉积过程中进行了精确的插层控制,在沉积四层双层时实现了最佳控制和最高的重现性。通过交替真空沉积两层双层,获得了6.79%的功率转换效率,短路电流密度( )为12.06 mA/cm,开路电压( )为0.79 V,填充因子(FF)为0.72。我们的结果表明了一种通过交替真空沉积将无机前驱体用于高效钙钛矿太阳能电池的途径。