Sun Cuicui, Jiang Yingjie, Wang Yanmin, Liu Xiao-Cun, Wu Yanling, Ding Yongling, Zhang Guiling
School of Civil Engineering, Shandong Jiaotong University Jinan 250300 China.
State Key Laboratory for Turbulence and Complex System, Department of Mechanics and Engineering Science, College of Engineering, Peking University Beijing 100871 China
RSC Adv. 2021 Nov 4;11(57):35718-35725. doi: 10.1039/d1ra07161k.
The electronic and transport properties of fluorographane (CHF) nanoribbons, , bare (B-CHF) and hydrogen-passivated (H-CHF) CHF nanoribbons, are extensively investigated using first-principles calculations. The results indicate that edge states are present in all the B-CHF nanoribbons, which are not allowed in the H-CHF nanoribbons regardless of the directions. The spin splitting phenomenon of band structure only appears in the zigzag direction. This behavior mainly originates from the dehydrogenation operation, which leads to sp hybridization at the edge. The H-CHF nanoribbons are semiconductors with wide band gaps. However, the band gap of B-CHF nanoribbons is significantly reduced. Remarkably, the phase transition can be induced by the changes in the magnetic coupling at the nanoribbon edges. In addition, the B-CHF nanoribbons along the zigzag direction show optimal conductivity, which is consistent with the band structures. Furthermore, a perfect spin filtering controller can be achieved by changing the magnetization direction of the edge C atoms. These results may serve as a useful reference for the application of CHF nanoribbons in spintronic devices.
使用第一性原理计算方法,对氟代石墨烷(CHF)纳米带,即裸露的(B-CHF)和氢钝化的(H-CHF)CHF纳米带的电子和输运性质进行了广泛研究。结果表明,所有B-CHF纳米带中均存在边缘态,而无论方向如何,H-CHF纳米带中均不存在边缘态。能带结构的自旋分裂现象仅出现在锯齿形方向。这种行为主要源于脱氢操作,该操作导致边缘处的sp杂化。H-CHF纳米带是具有宽带隙的半导体。然而,B-CHF纳米带的带隙显著减小。值得注意的是,纳米带边缘处磁耦合的变化可诱导相变。此外,沿锯齿形方向的B-CHF纳米带表现出最佳的导电性,这与能带结构一致。此外,通过改变边缘C原子的磁化方向,可以实现完美的自旋过滤控制器。这些结果可为CHF纳米带在自旋电子器件中的应用提供有用的参考。