Nordenström Andreas, Iakunkov Artem, Sun Jinhua, Talyzin Alexandr V
Department of Physics, Umeå University Umeå Sweden
Department of Industrial and Materials Science, Chalmers University of Technology Gothenburg Sweden.
RSC Adv. 2020 Feb 13;10(12):6831-6839. doi: 10.1039/d0ra00067a.
Graphene oxide (GO) pillared with tetrakis(4-aminophenyl)methane (TKAM) molecules shows a narrow distribution of pore size, relatively high specific surface area, but it is hydrophilic and electrically not conductive. Analysis of XRD, N sorption, XPS, TGA and FTIR data proved that the pillared structure and relatively high surface area (∼350 m g) are preserved even after thermal reduction of GO pillared with TKAM molecules. Unlike many other organic pillaring molecules, TKAM is stable at temperatures above the point of GO thermal reduction, as demonstrated by TGA. Therefore, gentle annealing results in the formation of reduced graphene oxide (rGO) pillared with TKAM molecules. The TKAM pillared reduced graphene oxide (PrGO/TKAM) is less hydrophilic as found using dynamic vapor sorption (DVS) and more electrically conductive compared to pillared GO, but preserves an increased interlayer-distance of about 12 Å (compared to ∼7.5 Å in pristine GO). Thus we provide one of the first examples of porous rGO pillared with organic molecules and well-defined size of hydrophobic slit pores. Analysis of pore size distribution using nitrogen sorption isotherms demonstrates a single peak for pore size of ∼7 Å, which makes PrGO/TKAM rather promising for membrane and molecular sieve applications.
由四（4-氨基苯基）甲烷（TKAM）分子支撑的氧化石墨烯（GO）呈现出窄的孔径分布、相对较高的比表面积，但它具有亲水性且不导电。对XRD、N吸附、XPS、TGA和FTIR数据的分析证明，即使在用TKAM分子支撑的GO热还原后，支撑结构和相对较高的表面积（约350 m²/g）仍得以保留。与许多其他有机支撑分子不同，正如TGA所表明的，TKAM在高于GO热还原温度的情况下是稳定的。因此，温和退火会导致形成由TKAM分子支撑的还原氧化石墨烯（rGO）。使用动态蒸汽吸附（DVS）发现，与支撑的GO相比，TKAM支撑的还原氧化石墨烯（PrGO/TKAM）亲水性更低且导电性更强，但保留了增加的层间距，约为12 Å（相比之下，原始GO中的层间距约为7.5 Å）。因此，我们提供了首批用有机分子支撑且具有明确尺寸的疏水性狭缝孔的多孔rGO示例之一。使用氮吸附等温线对孔径分布的分析表明，孔径约为7 Å时出现单峰，这使得PrGO/TKAM在膜和分子筛应用方面颇具前景。
