Thakur Vikas N, Singh Bhanu P, Yadav Sanjay, Kumar Ashok
CSIR-National Physical Laboratory Dr K. S. Krishnan Marg New Delhi 110012 India
Academy of Scientific and Innovative Research (AcSIR), CSIR-National Physical Laboratory (CSIR-NPL) Campus Dr K. S. Krishnan Road New Delhi 110012 India.
RSC Adv. 2020 Mar 3;10(15):9140-9145. doi: 10.1039/d0ra00484g. eCollection 2020 Feb 27.
We report the fabrication of single-phase polycrystalline PbBi(ZrTi)O (PBiZT) ceramic which shows large polarization, , ∼40 μC cm and piezoelectric coefficients ∼130 pC N and giant linear change in capacitive reactance and dielectric properties with increasing and decreasing pressure in the range of 1 kHz to 5 MHz. Nearly 70% change in dielectric constant and 56% change in capacitive reactance were obtained in the pressure range of 20-200 MPa, which makes it suitable for applications as a capacitive pressure sensor/gauge. The sensitivity of the device is calculated as 0.66 MPa and 18.2 MPa at 1 MHz and 5 MHz, respectively, which is the highest ever reported value so far for any bulk polycrystalline ceramic. The compressive stress of the device was tested according to the standard test method as a function of linear and volumetric strain, which yields the Young's modulus, Bulk modulus, and Poisson's ratio of the device. These values were further utilized to calculate actual stress in the sample and energy density using ANSYS software, which indicates at least four orders smaller pressure in the sample compared to the applied pressure.
我们报道了单相多晶PbBi(ZrTi)O(PBiZT)陶瓷的制备,该陶瓷显示出大极化强度,约40 μC/cm²,压电系数约130 pC/N,并且在1 kHz至5 MHz范围内,随着压力的增加和降低,电容电抗和介电性能呈现出巨大的线性变化。在20 - 200 MPa的压力范围内,介电常数变化近70%,电容电抗变化56%,这使其适用于电容式压力传感器/压力计应用。该器件在1 MHz和5 MHz时的灵敏度分别计算为0.66 MPa和18.2 MPa,这是迄今为止任何块状多晶陶瓷所报道的最高值。根据标准测试方法,测试了该器件的压缩应力与线性和体积应变的函数关系,从而得出该器件的杨氏模量、体积模量和泊松比。利用这些值,通过ANSYS软件进一步计算样品中的实际应力和能量密度,结果表明样品中的压力比施加压力至少小四个数量级。