Peng Xue, Lv Yanfei, Fu Li, Chen Fei, Su Weitao, Li Jingzhou, Zhang Qi, Zhao Shichao
College of Materials & Environmental Engineering, Hangzhou Dianzi University Hangzhou 310018 P. R. China
Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences Hangzhou 310024 P. R. China
RSC Adv. 2021 Oct 21;11(54):34095-34100. doi: 10.1039/d1ra07112b. eCollection 2021 Oct 18.
Although cuprous phosphide (CuP) has been widely studied and applied in other fields, its photoluminescence (PL) properties are rarely investigated. Herein, we report that CuP can emit near-infrared light at 750 nm. We show that the annealing and the presence of cuprous oxide can enhance the PL emission. The mechanism of the PL enhancement is the improvement of crystal quality and the formation of a space charge region. Our results provide a reference for improving the PL properties of p-type semiconductors.
尽管磷化亚铜(CuP)已在其他领域得到广泛研究和应用,但其光致发光(PL)特性却鲜有研究。在此,我们报告CuP可在750nm处发射近红外光。我们表明退火和氧化亚铜的存在可增强PL发射。PL增强的机制是晶体质量的改善和空间电荷区的形成。我们的结果为改善p型半导体的PL特性提供了参考。