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基于 S、N 共掺杂石墨烯量子点(S、N-GQD)修饰电极的无标记光电化学传感器用于双酚 A 的超灵敏检测。

A label-free photoelectrochemical sensor of S, N co-doped graphene quantum dot (S, N-GQD)-modified electrode for ultrasensitive detection of bisphenol A.

机构信息

School of Materials Science and Chemical Engineering, Ningbo University, Ningbo, 315211, People's Republic of China.

School of Chemistry and Chemical Engineering, Nantong University, Nantong, 226019, People's Republic of China.

出版信息

Mikrochim Acta. 2022 May 2;189(5):208. doi: 10.1007/s00604-022-05289-3.

DOI:10.1007/s00604-022-05289-3
PMID:35501498
Abstract

S, N co-doped graphene quantum dot (S, N-GQD) materials have been composited via a one-pot pattern and used as photosensitive materials to construct a label-free photoelectrochemical (PEC) sensor. The PEC experiments show an enhanced photocurrent response toward Bisphenol A (BPA) sensing due to the increased charge transfer rate and the enhanced absorption of visible light. Compared with dark conditions, the photocurrent signal (- 0.2 V vs. SCE) is greatly increased because of the effective oxidation of BPA by photogenerated holes and the rapid electron transfer of S, N-GQDs on the PEC sensing platform. Under optimal conditions linear current response to BPA is in two ranges of 0.12-5 µM and 5-40 µM. The limit of detection is 0.04 µM (S/N = 3). The designed sensor has enduring stability and admirable interference immunity. It  provides an alternative approach for BPA determination in real samples with recoveries of 99.3-103% and  RSD of 2.0-4.1%.

摘要

S、N 共掺杂石墨烯量子点(S、N-GQD)材料通过一锅法合成,并用作光敏材料来构建无标记光电化学(PEC)传感器。PEC 实验表明,由于电荷转移速率的提高和可见光的增强吸收,对双酚 A(BPA)传感的光电流响应得到了增强。与暗条件相比,由于光生空穴对 BPA 的有效氧化和 PEC 传感平台上 S、N-GQDs 的快速电子转移,光电流信号(-0.2 V 对 SCE)大大增加。在最佳条件下,BPA 的线性电流响应在两个范围内为 0.12-5 µM 和 5-40 µM。检测限为 0.04 µM(S/N = 3)。设计的传感器具有持久的稳定性和令人钦佩的抗干扰能力。它为实际样品中 BPA 的测定提供了一种替代方法,回收率为 99.3-103%,RSD 为 2.0-4.1%。

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