• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

石墨烯中1/噪声的本质——迁移率波动机制的确凿证据

Nature of the 1/ noise in graphene-direct evidence for the mobility fluctuation mechanism.

作者信息

Rehman Adil, Delgado Notario Juan Antonio, Salvador Sanchez Juan, Meziani Yahya Moubarak, Cywiński Grzegorz, Knap Wojciech, Balandin Alexander A, Levinshtein Michael, Rumyantsev Sergey

机构信息

CENTERA Laboratories, Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw 01-142, Poland.

Nanotechnology Group, USAL-Nanolab, Universidad de Salamanca, Salamanca 37008, Spain.

出版信息

Nanoscale. 2022 May 19;14(19):7242-7249. doi: 10.1039/d2nr00207h.

DOI:10.1039/d2nr00207h
PMID:35514294
Abstract

The nature of the low-frequency 1/ noise in electronic materials and devices is one of the oldest unsolved physical problems ( is the frequency). The fundamental question of the noise source-fluctuations in the mobility . number of charge carriers-is still debated. While there are several pieces of evidence to prove that the 1/ noise in semiconductors is due to the fluctuations in the number of the charge carriers, there is no direct evidence of the mobility fluctuations as the source of 1/ noise in any material. Herein, we measured noise in an -BN encapsulated graphene transistor under the conditions of geometrical magnetoresistance to directly assess the mechanism of low-frequency electronic current fluctuations. It was found that the relative noise spectral density of the graphene resistance fluctuations depends non-monotonically on the magnetic field () with a minimum at approximately ≅ 1 ( is the electron mobility). This observation proves unambiguously that mobility fluctuations are the dominant mechanism of electronic noise in high-quality graphene. Our results are important for all proposed applications of graphene in electronics and add to the fundamental understanding of the 1/ noise origin in any electronic device.

摘要

电子材料和器件中低频1/f噪声的本质是最古老的未解决物理问题之一(指频率)。噪声源——迁移率波动、载流子数量——的基本问题仍存在争议。虽然有若干证据证明半导体中的1/f噪声是由于载流子数量的波动,但在任何材料中都没有直接证据表明迁移率波动是1/f噪声的来源。在此,我们在几何磁阻条件下测量了六方氮化硼(h-BN)封装的石墨烯晶体管中的噪声,以直接评估低频电子电流波动的机制。研究发现,石墨烯电阻波动的相对噪声谱密度随磁场(B)呈非单调变化,在大约B≅1特斯拉(μ是电子迁移率)时达到最小值。这一观察结果明确证明,迁移率波动是高质量石墨烯中电子噪声的主导机制。我们的结果对于石墨烯在电子学中的所有拟议应用都很重要,并加深了对任何电子器件中1/f噪声起源的基本理解。

相似文献

1
Nature of the 1/ noise in graphene-direct evidence for the mobility fluctuation mechanism.石墨烯中1/噪声的本质——迁移率波动机制的确凿证据
Nanoscale. 2022 May 19;14(19):7242-7249. doi: 10.1039/d2nr00207h.
2
Noise in Graphene Superlattices Grown on Hexagonal Boron Nitride.生长在六方氮化硼上的石墨烯超晶格中的噪声。
ACS Nano. 2015 Nov 24;9(11):11382-8. doi: 10.1021/acsnano.5b05283. Epub 2015 Oct 12.
3
Sensing Remote Bulk Defects through Resistance Noise in a Large-Area Graphene Field-Effect Transistor.通过大面积石墨烯场效应晶体管中的电阻噪声传感远程体缺陷
ACS Appl Mater Interfaces. 2022 Nov 16;14(45):51105-51112. doi: 10.1021/acsami.2c14499. Epub 2022 Nov 2.
4
Low-frequency 1/f noise in graphene devices.石墨烯器件中的低频 1/f 噪声。
Nat Nanotechnol. 2013 Aug;8(8):549-55. doi: 10.1038/nnano.2013.144.
5
Carrier-Number-Fluctuation Induced Ultralow 1/f Noise Level in Top-Gated Graphene Field Effect Transistor.载流子数波动导致顶部栅控石墨烯场效应晶体管超低 1/f 噪声水平。
ACS Appl Mater Interfaces. 2017 Mar 1;9(8):6661-6665. doi: 10.1021/acsami.6b15862. Epub 2017 Feb 13.
6
Mobility-dependent low-frequency noise in graphene field-effect transistors.在石墨烯场效应晶体管中,与迁移率相关的低频噪声。
ACS Nano. 2011 Oct 25;5(10):8124-30. doi: 10.1021/nn202749z. Epub 2011 Sep 19.
7
Understanding the bias dependence of low frequency noise in single layer graphene FETs.理解单层石墨烯 FET 中低频噪声的偏置相关性。
Nanoscale. 2018 Aug 9;10(31):14947-14956. doi: 10.1039/c8nr04939d.
8
Determination of the Thermal Noise Limit of Graphene Biotransistors.石墨烯生物晶体管的热噪声极限测定。
Nano Lett. 2015 Aug 12;15(8):5404-7. doi: 10.1021/acs.nanolett.5b01788. Epub 2015 Jul 20.
9
Magnitude and Origin of Electrical Noise at Individual Grain Boundaries in Graphene.石墨烯中单个晶界处的电噪声幅度和来源。
Nano Lett. 2016 Jan 13;16(1):562-7. doi: 10.1021/acs.nanolett.5b04234. Epub 2015 Dec 7.
10
Nature of low-frequency noise in homogeneous semiconductors.均匀半导体中低频噪声的特性。
Sci Rep. 2015 Dec 17;5:18305. doi: 10.1038/srep18305.

引用本文的文献

1
Quantum electrometer for time-resolved material science at the atomic lattice scale.用于原子晶格尺度时间分辨材料科学的量子静电计。
Nat Commun. 2025 Jul 11;16(1):6435. doi: 10.1038/s41467-025-61839-2.
2
Temperature and electron concentration dependences of 1/ noise in HgCdTe - evidence for a mobility fluctuations mechanism.HgCdTe中1/f噪声的温度和电子浓度依赖性——迁移率涨落机制的证据
Nanoscale. 2025 Mar 24;17(12):7281-7288. doi: 10.1039/d4nr04494k.
3
Flicker Noise in Resistive Gas Sensors-Measurement Setups and Applications for Enhanced Gas Sensing.
电阻式气体传感器中的闪烁噪声——增强气体传感的测量设置及应用
Sensors (Basel). 2024 Jan 9;24(2):405. doi: 10.3390/s24020405.
4
Recovery of off-state stress-induced damage in FET-type gas sensor using self-curing method.采用自固化方法恢复场效应晶体管型气体传感器中关态应力诱导损伤
Discov Nano. 2023 Feb 25;18(1):24. doi: 10.1186/s11671-023-03801-z.