Nano-Device Laboratory, Department of Electrical Engineering, Materials Science and Engineering Program, Bourns College of Engineering, University of California, Riverside, California 92521, USA.
Nat Nanotechnol. 2013 Aug;8(8):549-55. doi: 10.1038/nnano.2013.144.
Low-frequency noise with a spectral density that depends inversely on frequency has been observed in a wide variety of systems including current fluctuations in resistors, intensity fluctuations in music and signals in human cognition. In electronics, the phenomenon, which is known as 1/f noise, flicker noise or excess noise, hampers the operation of numerous devices and circuits, and can be a significant impediment to the development of practical applications from new materials. Graphene offers unique opportunities for studying 1/f noise because of its two-dimensional structure and widely tunable two-dimensional carrier concentration. The creation of practical graphene-based devices will also depend on our ability to understand and control the low-frequency noise in this material system. Here, the characteristic features of 1/f noise in graphene and few-layer graphene are reviewed, and the implications of such noise for the development of graphene-based electronics including high-frequency devices and sensors are examined.
在包括电阻器中的电流波动、音乐中的强度波动以及人类认知中的信号在内的各种系统中，都观察到了依赖于频率的低频噪声，其频谱密度呈反比。在电子学中，这种被称为 1/f 噪声、闪烁噪声或过剩噪声的现象，会干扰众多设备和电路的运行，并且可能会对从新材料开发实际应用造成严重阻碍。由于其二维结构和可广泛调节的二维载流子浓度，石墨烯为研究 1/f 噪声提供了独特的机会。实际的基于石墨烯的器件的创建也将取决于我们理解和控制该材料系统中低频噪声的能力。在此，回顾了石墨烯和少层石墨烯中 1/f 噪声的特征，并研究了这种噪声对基于石墨烯的电子学（包括高频器件和传感器）发展的影响。
