Park HyunJung, Bae Soohyun, Park Se Jin, Hyun Ji Yeon, Lee Chang Hyun, Choi Dongjin, Kang Dongkyun, Han Hyebin, Kang Yoonmook, Lee Hae-Seok, Kim Donghwan
Department of Materials Science and Engineering, Korea University Seoul 02841 Republic of Korea
KU-KIST Green School Graduate School of Energy and Environment, Korea University Seoul 02841 Republic of Korea.
RSC Adv. 2019 Jul 26;9(40):23261-23266. doi: 10.1039/c9ra03560e. eCollection 2019 Jul 23.
In this study, we focused on understanding the roles of a polysilicon (poly-Si) layer in poly-Si/SiO /c-Si passivating contacts. Passivating contact formation conditions were varied by changing the doping method, annealing temperature and time, polysilicon layer thickness, and polysilicon doping concentration. Our observations indicated that the roles of polysilicon are contact, in-diffusion barrier action, field effect, gettering, and light absorption. Based on the observations, a i of 741 mV was obtained. Finally, to increase with high , the polysilicon was etched after hydrogenation to reduce light absorption with high passivation quality. i was not affected by etching; moreover, by etching the polysilicon from 300 nm to 60 nm, the cell efficiency increased from 20.48% to 20.59% with increasing , constant , and fill factor.
在本研究中，我们着重于理解多晶硅（poly-Si）层在多晶硅/二氧化硅/晶体硅钝化接触中的作用。通过改变掺杂方法、退火温度和时间、多晶硅层厚度以及多晶硅掺杂浓度来改变钝化接触的形成条件。我们的观察结果表明，多晶硅的作用包括接触、内扩散阻挡作用、场效应、吸杂和光吸收。基于这些观察结果，获得了741 mV的开路电压。最后，为了在高开路电压下提高效率，在氢化后对多晶硅进行蚀刻以降低光吸收并保持高钝化质量。开路电压不受蚀刻影响；此外，通过将多晶硅从300 nm蚀刻至60 nm，在开路电压增加、短路电流密度不变和填充因子不变的情况下，电池效率从20.48%提高到了20.59%。
