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基于光动力非晶氧化物半导体及其持续光导特性的脑启发型光子神经形态器件。

Brain-Inspired Photonic Neuromorphic Devices using Photodynamic Amorphous Oxide Semiconductors and their Persistent Photoconductivity.

机构信息

SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, Korea.

School of Electrical and Electronic Engineering, Chung-Ang University, Seoul, 06980, Korea.

出版信息

Adv Mater. 2017 Jul;29(28). doi: 10.1002/adma.201700951. Epub 2017 May 17.

Abstract

The combination of a neuromorphic architecture and photonic computing may open up a new era for computational systems owing to the possibility of attaining high bandwidths and the low-computation-power requirements. Here, the demonstration of photonic neuromorphic devices based on amorphous oxide semiconductors (AOSs) that mimic major synaptic functions, such as short-term memory/long-term memory, spike-timing-dependent plasticity, and neural facilitation, is reported. The synaptic functions are successfully emulated using the inherent persistent photoconductivity (PPC) characteristic of AOSs. Systematic analysis of the dynamics of photogenerated carriers for various AOSs is carried out to understand the fundamental mechanisms underlying the photoinduced carrier-generation and relaxation behaviors, and to search for a proper channel material for photonic neuromorphic devices. It is found that the activation energy for the neutralization of ionized oxygen vacancies has a significant influence on the photocarrier-generation and time-variant recovery behaviors of AOSs, affecting the PPC behavior.

摘要

基于非晶氧化物半导体(AOS)的光子神经形态器件的演示,该器件模拟了主要的突触功能,如短期记忆/长期记忆、尖峰时间依赖性可塑性和神经易化。报道称,神经形态架构和光子计算的结合可能开创计算系统的新时代,因为有可能实现高带宽和低计算功耗要求。利用 AOS 的固有持续光电导(PPC)特性成功模拟了突触功能。对各种 AOS 的光生载流子动力学进行了系统分析,以了解光致载流子产生和弛豫行为的基本机制,并寻找用于光子神经形态器件的合适沟道材料。结果发现,用于中和离子氧空位的激活能对 AOS 的光生载流子产生和时变恢复行为有显著影响,从而影响 PPC 行为。

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