Wang Wenjie, Chen Jing, Deng Jiajun, Che Jiantao, Hu Bing, Cheng Xin
Mathematics and Physics Department, North China Electric Power University Beijing 102206 China
RSC Adv. 2019 Apr 8;9(19):10776-10780. doi: 10.1039/c8ra10256b. eCollection 2019 Apr 3.
The effect of Sb content on the in-plane anisotropic magnetoresistance (AMR) of the quaternary ferromagnetic semiconductor (Ga, Mn)(As, Sb) was investigated. The results showed that the strain increased with Sb content, but the hole density was found to fluctuate. Dominant cubic and uniaxial symmetries were observed for the current along the [110] crystalline direction. The dependence of the symmetry on the Sb content was demonstrated for the longitudinal AMR, which mainly results from the alteration of the local stain relaxation and the hole density. A phenomenological analysis showed that the variation of the AMR coefficients is a good explanation for the observed experimental results.
研究了锑含量对四元铁磁半导体（Ga，Mn）（As，Sb）面内各向异性磁电阻（AMR）的影响。结果表明，应变随锑含量增加而增大，但发现空穴密度存在波动。对于沿[110]晶体方向的电流，观察到主要的立方和单轴对称性。纵向AMR的对称性对锑含量的依赖性得到了证明，纵向AMR主要源于局部应变弛豫和空穴密度的变化。唯象分析表明，AMR系数的变化很好地解释了所观察到的实验结果。
