Nikam S M, Sharma A, Rahaman M, Teli A M, Mujawar S H, Zahn D R T, Patil P S, Sahoo S C, Salvan G, Patil P B
School of Nanoscience and Technology, Shivaji University Kolhapur Maharashtra - 416004 India.
Semiconductor Physics, Chemnitz University of Technology 09107 Chemnitz Germany
RSC Adv. 2020 May 20;10(33):19353-19359. doi: 10.1039/d0ra02564j.
The influence of the substrate temperature on pulsed laser deposited (PLD) CoFeO thin films for supercapacitor electrodes was thoroughly investigated. X-ray diffractometry and Raman spectroscopic analyses confirmed the formation of CoFeO phase for films deposited at a substrate temperature of 450 °C. Topography and surface smoothness was measured using atomic force microscopy. We observed that the films deposited at room temperature showed improved electrochemical performance and supercapacitive properties compared to those of films deposited at 450 °C. Specific capacitances of about 777.4 F g and 258.5 F g were obtained for electrodes deposited at RT and 450 °C, respectively, at 0.5 mA cm current density. The CoFeO films deposited at room temperature exhibited an excellent power density (3277 W kg) and energy density (17 W h kg). Using electrochemical impedance spectroscopy, the series resistance and charge transfer resistance were found to be 1.1 Ω and 1.5 Ω, respectively. The cyclic stability was increased up to 125% after 1500 cycles due to the increasing electroactive surface of CoFeO along with the fast electron and ion transport at the surface.
深入研究了衬底温度对用于超级电容器电极的脉冲激光沉积(PLD)CoFeO薄膜的影响。X射线衍射和拉曼光谱分析证实,在450°C衬底温度下沉积的薄膜形成了CoFeO相。使用原子力显微镜测量了薄膜的形貌和表面平整度。我们观察到,与在450°C沉积的薄膜相比,室温下沉积的薄膜表现出更好的电化学性能和超级电容特性。在0.5 mA cm电流密度下,室温沉积电极和450°C沉积电极的比电容分别约为777.4 F g和258.5 F g。室温下沉积的CoFeO薄膜表现出优异的功率密度(3277 W kg)和能量密度(17 W h kg)。使用电化学阻抗谱,发现串联电阻和电荷转移电阻分别为1.1 Ω和1.5 Ω。由于CoFeO的电活性表面增加以及表面快速的电子和离子传输,1500次循环后循环稳定性提高到了125%。