Liu Yu-Hua, Jiang Zhong-Jie
School of Physics and Electronic Engineering, Guangzhou University Guangzhou 510006 China.
Guangzhou Key Laboratory for Surface Chemistry of Energy Materials, New Energy Research Institute, College of Environment and Energy, South China University of Technology Guangzhou 510006 Guangdong China
RSC Adv. 2020 May 21;10(33):19562-19569. doi: 10.1039/d0ra03428b. eCollection 2020 May 20.
In this work, density functional theory (DFT) calculations are performed to understand the origin of the regioselective C-H borylation of aromatics catalyzed by Co(i)/PNP and Ir(iii)/dtbpy (4,4-di--butyl bipyridine). The calculation results indicate that for the Co(i)/PNP catalytic system, the undirected pathway is 2.9 kcal mol more favoured over the directed pathway leading to -to-fluorine selectivity. In contrast, for the Ir(iii)/dtbpy catalytic system, the directed pathway is 1.2 kcal mol more favoured over the undirected pathway bringing about -to-silyl selectivity. For Co(i)/PNP catalyzed borylation, the undirected pathway which involves steps of -to-fluorine C-H oxidative addition, C-B reductive elimination, B-B oxidative addition, and B-H reductive elimination is favorable due to the electron deficient character of the -to-fluorine C-H bond. For Ir(iii)/dtbpy catalyzed borylation, the directed pathway consisting of Si-H oxidative addition, B-H reductive elimination, C-H oxidative addition, B-B oxidative addition, C-B reductive elimination, Si-H reductive elimination is favored over the undirected pathway attributed to the directing effect of the hydrosilyl group. The favourable undirected pathway (o-to-fluorine selectivity) for Co(i)/PNP catalyzed borylation and the favourable directed pathway (-to-silyl selectivity) for Ir(iii)/dtbpy catalyzed borylation could explain well the experimentally observed -to-fluorine borylation of hydrosilyl substituted fluoroarenes with cobalt catalyst (J. V. Obligacion, M. J. Bezdek and P. J. Chirik, , 2017, , 2825-2832) and -to-silyl selectivity with iridium catalyst (T. A. Boebel and J. F. Hartwig, , 2008, , 7534-7535).
在本工作中,进行了密度泛函理论(DFT)计算,以了解由Co(i)/PNP和Ir(iii)/dtbpy(4,4 - 二叔丁基联吡啶)催化的芳烃区域选择性C - H硼化反应的起源。计算结果表明,对于Co(i)/PNP催化体系,无定向途径比导致邻位到氟选择性的定向途径更有利2.9千卡/摩尔。相反,对于Ir(iii)/dtbpy催化体系,定向途径比导致邻位到硅基选择性的无定向途径更有利1.2千卡/摩尔。对于Co(i)/PNP催化的硼化反应,涉及邻位到氟的C - H氧化加成、C - B还原消除、B - B氧化加成和B - H还原消除步骤的无定向途径由于邻位到氟的C - H键的缺电子特性而有利。对于Ir(iii)/dtbpy催化的硼化反应,由Si - H氧化加成、B - H还原消除、C - H氧化加成、B - B氧化加成、C - B还原消除、Si - H还原消除组成的定向途径比无定向途径更有利,这归因于氢硅烷基团的导向作用。Co(i)/PNP催化硼化反应的有利无定向途径(邻位到氟选择性)和Ir(iii)/dtbpy催化硼化反应的有利定向途径(邻位到硅基选择性)可以很好地解释实验观察到的用钴催化剂使氢硅烷基取代的氟芳烃发生邻位到氟的硼化反应(J. V. Obligacion, M. J. Bezdek和P. J. Chirik, ,2017, ,2825 - 2832)以及用铱催化剂的邻位到硅基选择性(T. A. Boebel和J. F. Hartwig, ,2008, ,7534 - 7535)。