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用于增强光电性能的具有可调结构和导电类型的溴氧化铋薄膜的室温合成。

Room temperature synthesis of BiOBr I thin films with tunable structure and conductivity type for enhanced photoelectric performance.

作者信息

Jia Huimin, Li Yuxing, Mao Yuanyang, Yu Dufei, He Weiwei, Zheng Zhi

机构信息

Key Laboratory for Micro-Nano Energy Storage and Conversion Materials of Henan Province, College of Chemical and Materials Engineering, Institute of Surface Micro and Nano Materials, Xuchang University Henan 461000 P. R. China

出版信息

RSC Adv. 2020 Nov 16;10(68):41755-41763. doi: 10.1039/d0ra08211b. eCollection 2020 Nov 11.

Abstract

The surface states of semiconductors determine the semiconductor type. Although BiOCI, BiOBr and BiOI all belong to the bismuth oxyhalide semiconductor family and have similar crystal structures and electronic structures, they exhibit different conductivity types due to their respective surface states. In this paper, a modified successive ionic layer adsorption and reaction (SILAR) method was developed to fabricate I-doped BiOBr I nanosheet array films on FTO substrates at room temperature for the first time. Interestingly, the properties of p-type BiOBr were changed by doping an appropriate amount of iodine into a BiOBr film to form an n-type BiOBr I thin film. The I-doped BiOBr I ( = 0.2, 0.4, 0.5) nanosheet arrays had a perfect single-crystal structure, and the dominant growth plane was (110). A higher doping amount of I led to a darker colour of the BiOBr I film and a redshift of the absorption wavelength; consequently, the bandgap value changed from 2.80 eV to 1.85 eV. The highest short-circuit current and open-circuit voltage of the solar cell based on BiOBrI film could reach 1.73 mA cm and 0.55 V, which was considered to be attributed to the effective light absorbance, long photogenerated charge lifetime and sufficient charge separation in the BiOBrI film.

摘要

半导体的表面态决定了半导体类型。尽管BiOCI、BiOBr和BiOI都属于卤氧化铋半导体家族,且具有相似的晶体结构和电子结构,但由于它们各自的表面态,它们表现出不同的导电类型。本文首次开发了一种改进的连续离子层吸附和反应(SILAR)方法,在室温下于FTO衬底上制备I掺杂的BiOBrI纳米片阵列薄膜。有趣的是,通过向BiOBr薄膜中掺杂适量的碘以形成n型BiOBrI薄膜,改变了p型BiOBr的性质。I掺杂的BiOBrI( = 0.2、0.4、0.5)纳米片阵列具有完美的单晶结构,且主要生长面为(110)。较高的I掺杂量导致BiOBrI薄膜颜色变深且吸收波长发生红移;因此,带隙值从2.80 eV变为1.85 eV。基于BiOBrI薄膜的太阳能电池的最高短路电流和开路电压可分别达到1.73 mA cm和0.55 V,这被认为归因于BiOBrI薄膜中有效的光吸收、较长的光生电荷寿命和充分的电荷分离。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2c8a/9057841/0c38d7190667/d0ra08211b-f1.jpg

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