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基于第一性原理计算的锑纳米带化学键驱动边缘重构及其热电性质

A chemical-bond-driven edge reconstruction of Sb nanoribbons and their thermoelectric properties from first-principles calculations.

作者信息

Shen Jin-Ni, Fang Yi, Lin Zi-Xiong, Xie Tian-Zhu, Zhang Yong-Fan, Wu Li-Ming

机构信息

College of Materials Science and Engineering, Fuzhou University Fujian 350108 People's Republic of China.

Key Laboratory of Eco-materials Advanced Technology (Fuzhou University), Fujian Province University Fuzhou 350002 China.

出版信息

RSC Adv. 2019 Jan 9;9(2):1047-1054. doi: 10.1039/c8ra07395c. eCollection 2019 Jan 2.

Abstract

We present a theoretical study on the potential thermoelectric performance of antimony nanoribbons (SNRs). Based on density functional theory and the semiclassical transport model, the thermoelectric figure of merit was calculated for various Sb nanoribbon sizes and different chiralities. The results indicated that the chemical-bond-driven edge reconstruction of nanoribbons (denoted as SNRs-recon) eliminated all of the dangling bonds and passivated all of the boundary antimony atoms with 3-fold coordination. SNRs-recon are the most energy favorable compared to the ribbons with unsaturated edge atoms. Semimetal to semiconductor transition occurred in SNRs-recon. The band gap was width-dependent in armchair SNRs (denoted as ASNRs-recon), whereas it was width-independent in zigzag SNRs (ZSNRs-recon). After nanolization and reconstruction, the TE properties of SNRs were enhanced due to higher Seebeck coefficient and lower thermal conductivity. The thermoelectric properties of n-doped ASNRs-recon and p-doped ZSNRs-recon showed width-dependent odd-even oscillation and eventually resulted in values of 0.75 and 0.60, respectively. Upon increasing the ribbon width, of n-doped ASNRs-recon decreased and approached a constant value of about 0.85. However, n-doped ZSNRs-recon exhibited poor TE performance compared with the others. Importantly, the value could be optimized to as high as 1.91 at 300 K, which was larger than those of Sb-based bulk materials and 100 times that of thin Sb films. These optimizations make the materials promising room-temperature high-performance thermoelectric materials. Furthermore, the proposed new concept of chemical-bond-driven edge reconstruction may be useful for many other related systems.

摘要

我们对锑纳米带(SNRs)的潜在热电性能进行了理论研究。基于密度泛函理论和半经典输运模型,计算了不同尺寸和不同手性的锑纳米带的热电品质因数。结果表明,纳米带的化学键驱动边缘重构(记为SNRs-recon)消除了所有悬空键,并使所有边界锑原子以三配位形式钝化。与具有不饱和边缘原子的纳米带相比,SNRs-recon在能量上最为有利。SNRs-recon中发生了从半金属到半导体的转变。扶手椅型SNRs(记为ASNRs-recon)的带隙与宽度有关,而锯齿型SNRs(ZSNRs-recon)的带隙与宽度无关。经过纳米化和重构后,由于塞贝克系数较高和热导率较低,SNRs的热电性能得到了增强。n型掺杂的ASNRs-recon和p型掺杂的ZSNRs-recon的热电性能表现出与宽度有关的奇偶振荡,最终分别得到0.75和0.60的品质因数。随着纳米带宽度的增加,n型掺杂的ASNRs-recon的品质因数降低并接近约0.85的恒定值。然而,与其他材料相比,n型掺杂的ZSNRs-recon的热电性能较差。重要的是,在300 K时,品质因数可以优化到高达1.91,这比锑基块体材料的品质因数大,是锑薄膜品质因数的100倍。这些优化使得这些材料有望成为室温高性能热电材料。此外,提出的化学键驱动边缘重构这一新概念可能对许多其他相关系统有用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0a55/9059517/0b1ba53815d9/c8ra07395c-f1.jpg

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