Cen Jianhang, Li Shunning, Zheng Jiaxin, Pan Feng
School of Advanced Materials, Peking University, Shenzhen Graduate School Shenzhen 518055 People's Republic of China
RSC Adv. 2019 Jan 8;9(2):819-823. doi: 10.1039/c8ra09009b. eCollection 2019 Jan 2.
Monoclinic BiVO has been regarded as a promising photocatalyst for water splitting in recent years. In this research, the effects of Mo/W dopants near the surfaces of BiVO on electron transport are investigated using first-principles calculations. We demonstrate that the additional electron introduced by Mo/W either in the bulk or near the surfaces forms a self-trapped small polaron. The polaron prefers to be localized on the transition metal ions in the subsurface layer when Mo/W is doped in the vicinity of the surfaces. The localized positions of polarons can be rationalized by the d-orbital energy levels of the transition metals and the variation of electrostatic potential. The concentrated electron polarons in the subsurface layer of BiVO surfaces can build fast lanes for electron migration and mitigate the electron-hole recombination process, which underlines the importance of dopants near the surfaces as compared with those in the bulk.
近年来,单斜晶系的BiVO被认为是一种很有前景的用于水分解的光催化剂。在本研究中,利用第一性原理计算研究了BiVO表面附近的Mo/W掺杂剂对电子传输的影响。我们证明,由Mo/W在体相或表面附近引入的额外电子形成了一个自陷小极化子。当Mo/W掺杂在表面附近时,极化子更倾向于定域在次表层的过渡金属离子上。极化子的定域位置可以通过过渡金属的d轨道能级和静电势的变化来解释。BiVO表面次表层中集中的电子极化子可以为电子迁移建立快速通道,并减轻电子-空穴复合过程,这突出了表面附近掺杂剂相对于体相掺杂剂的重要性。