Li Bixin, Zhang Shiyang, Li Xianglin
Department of Science Education, Laboratory of College Physics, Hunan First Normal University Changsha 410205 People's Republic of China
RSC Adv. 2019 Jan 23;9(6):3157-3161. doi: 10.1039/c8ra10006c. eCollection 2019 Jan 22.
The temperature effect on hole transport in representative organic bulk heterojunctions has been explored. Two model systems, namely, copper phthalocyanine (CuPc):fullerene (C), and zinc phthalocyanine (ZnPc):C, are chosen as case studies. The current-voltage (-) characteristics have been measured in hole-only configurations in the temperature range of 100-280 K and the temperature-dependent hole transport process has been revealed. At high voltages and temperatures from 180 to 280 K, charge transport is governed by the trapping model with space charge limited conduction in the presence of an exponential trap distribution. However, at temperatures below 180 K, the mobility model with field-dependent mobility fits the experimental data well, indicating that charge conduction occurs through a hopping mechanism. The extended state and localized state affected by temperature are responsible for hole transport in high and low temperature ranges, respectively.
研究了温度对代表性有机本体异质结中空穴传输的影响。选择了两个模型体系,即铜酞菁(CuPc):富勒烯(C)和锌酞菁(ZnPc):C作为案例研究。在100 - 280 K的温度范围内,在仅空穴配置下测量了电流 - 电压( - )特性,并揭示了与温度相关的空穴传输过程。在180至280 K的高电压和温度下,在存在指数陷阱分布的情况下,电荷传输由具有空间电荷限制传导的陷阱模型控制。然而,在低于180 K的温度下,具有场依赖迁移率的迁移率模型与实验数据拟合良好,表明电荷传导通过跳跃机制发生。受温度影响的扩展态和局域态分别在高温和低温范围内负责空穴传输。