Abbas Qaisar, Kazmi Syed Mesam Tamar, Li Chuanbo, Xu Xiulai, Rafiq M A
Condensed Matter Physics Laboratories, Department of Physics and Applied Mathematics, Pakistan Institute of Engineering and Applied Sciences PO Nilore Islamabad 45650 Pakistan
School of Science, Minzu University of China Beijing 100081 China.
RSC Adv. 2024 Feb 14;14(9):5812-5816. doi: 10.1039/d3ra07812d.
In this study, we report the observation of various conduction mechanisms in mechanically exfoliated PbSnSe based on temperature-dependent current and voltage characteristics. A transition from direct tunneling to Fowler-Nordheim tunneling in PbSnSe was observed at 2.63 V. At lower temperatures, the 3D Mott variable range hopping model fits the data, yielding a density of states of ∼8.80 × 10 eV cm at 2 V. The values of and were 64 meV and 22.7 nm, respectively, at 250 K. The Poole-Frenkel conduction was observed in the Au/PbSnSe/Au device and the dielectric constant of PbSnSe was calculated to be 1.4. At intermediate voltages, a space charge limited current with an exponential distribution of traps was observed and a trap density of ∼9.53 × 10 cm and a trap characteristic temperature of 430 K were calculated for the Au/PbSnSe/Au device.
在本研究中，我们基于温度依赖的电流和电压特性，报告了对机械剥离的PbSnSe中各种传导机制的观察结果。在2.63 V时观察到PbSnSe中从直接隧穿到福勒-诺德海姆隧穿的转变。在较低温度下，三维莫特变程跳跃模型拟合数据，在2 V时得到的态密度约为8.80×10 eV cm 。在250 K时， 和 的值分别为64 meV和22.7 nm。在Au/PbSnSe/Au器件中观察到普尔-弗伦克尔传导，计算得出PbSnSe的介电常数为1.4。在中等电压下，观察到具有陷阱指数分布的空间电荷限制电流，并且计算出Au/PbSnSe/Au器件的陷阱密度约为9.53×10 cm 以及陷阱特征温度为430 K。
