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层状二硒化铼的能带结构分析及2μm调Q激光器应用

The energy band structure analysis and 2 μm Q-switched laser application of layered rhenium diselenide.

作者信息

Yao Yongping, Li Xiaowen, Song Rengang, Cui Na, Liu Shande, Zhang Huiyun, Li Dehua, Wang Qiangguo, Xu Yan, He Jingliang

机构信息

College of Electronic and Information Engineering, Shandong University of Science and Technology Qingdao 266590 China.

Key Laboratory of Micro-nano Measurement-Manipulation and Physics, Ministry of Education, Department of Applied Physics, Beihang University Beijing 100191 China.

出版信息

RSC Adv. 2019 May 8;9(25):14417-14421. doi: 10.1039/c9ra02311a. eCollection 2019 May 7.

DOI:10.1039/c9ra02311a
PMID:35519303
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9064133/
Abstract

Layered rhenium diselenide (ReSe) has triggered strong interest because of its outstanding optical and electrical properties. In this paper, we prepared a high-quality multilayer ReSe saturable absorber with a liquid-phase exfoliation method and characterized its saturable absorption properties around 2 μm. During the Q-switching regime, a maximum average output power of 1.7 W was obtained. A shortest pulse width of 925.8 ns was measured and the corresponding single pulse energy and peak power were 17.6 μJ and 19.0 W, respectively. The results indicate that layered ReSe is a promising alternative as a nonlinear optical modulator near the 2 μm region.

摘要

层状二硒化铼(ReSe₂)因其优异的光学和电学性质而引发了强烈关注。在本文中,我们采用液相剥离法制备了高质量的多层ReSe₂可饱和吸收体,并对其在2μm附近的可饱和吸收特性进行了表征。在调Q工作模式下,获得了1.7W的最大平均输出功率。测量到最短脉冲宽度为925.8ns,相应的单脉冲能量和峰值功率分别为17.6μJ和19.0W。结果表明,层状ReSe₂是2μm附近作为非线性光学调制器的一种有前途的替代材料。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bbe4/9064133/7bf763bcfd65/c9ra02311a-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bbe4/9064133/ebced3d05c9f/c9ra02311a-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bbe4/9064133/88e10f59d0c4/c9ra02311a-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bbe4/9064133/ebba322f586f/c9ra02311a-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bbe4/9064133/a1f0534d0758/c9ra02311a-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bbe4/9064133/227697046e21/c9ra02311a-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bbe4/9064133/7bf763bcfd65/c9ra02311a-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bbe4/9064133/ebced3d05c9f/c9ra02311a-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bbe4/9064133/88e10f59d0c4/c9ra02311a-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bbe4/9064133/ebba322f586f/c9ra02311a-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bbe4/9064133/a1f0534d0758/c9ra02311a-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bbe4/9064133/227697046e21/c9ra02311a-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bbe4/9064133/7bf763bcfd65/c9ra02311a-f6.jpg

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本文引用的文献

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Opt Express. 2018 Jul 9;26(14):18505-18512. doi: 10.1364/OE.26.018505.
2
Few-layered ReS as saturable absorber for 2.8  μm solid state laser.用于2.8μm固态激光器的少层ReS作为可饱和吸收体。
Opt Lett. 2017 Sep 1;42(17):3502-3505. doi: 10.1364/OL.42.003502.
3
Rhenium Dichalcogenides: Layered Semiconductors with Two Vertical Orientations.二硫化铼:具有两种垂直取向的层状半导体。
Nano Lett. 2016 Feb 10;16(2):1381-6. doi: 10.1021/acs.nanolett.5b04838. Epub 2016 Jan 26.
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Wideband saturable absorption in few-layer molybdenum diselenide (MoSe₂) for Q-switching Yb-, Er- and Tm-doped fiber lasers.用于调Q掺镱、掺铒和掺铥光纤激光器的少层二硒化钼(MoSe₂)中的宽带饱和吸收
Opt Express. 2015 Jul 27;23(15):20051-61. doi: 10.1364/OE.23.020051.
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Diode end-pumped passively Q-switched Tm:YAP laser with 1.85-mJ pulse energy.
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