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二硫化铼:具有两种垂直取向的层状半导体。

Rhenium Dichalcogenides: Layered Semiconductors with Two Vertical Orientations.

作者信息

Hart Lewis, Dale Sara, Hoye Sarah, Webb James L, Wolverson Daniel

机构信息

Department of Physics, University of Bath , Bath BA2 7AY, United Kingdom.

出版信息

Nano Lett. 2016 Feb 10;16(2):1381-6. doi: 10.1021/acs.nanolett.5b04838. Epub 2016 Jan 26.

Abstract

The rhenium and technetium diselenides and disulfides are van der Waals layered semiconductors in some respects similar to more well-known transition metal dichalcogenides (TMD) such as molybdenum sulfide. However, their symmetry is lower, consisting only of an inversion center, so that turning a layer upside-down (that is, applying a C2 rotation about an in-plane axis) is not a symmetry operation, but reverses the sign of the angle between the two nonequivalent in-plane crystallographic axes. A given layer thus can be placed on a substrate in two symmetrically nonequivalent (but energetically similar) ways. This has consequences for the exploitation of the anisotropic properties of these materials in TMD heterostructures and is expected to lead to a new source of domain structure in large-area layer growth. We produced few-layer ReS2 and ReSe2 samples with controlled "up" or "down" orientations by micromechanical cleavage and we show how polarized Raman microscopy can be used to distinguish these two orientations, thus establishing Raman as an essential tool for the characterization of large-area layers.

摘要

铼和锝的二硒化物与二硫化物是范德华层状半导体,在某些方面类似于更为人熟知的过渡金属二硫属化物(TMD),如硫化钼。然而,它们的对称性较低,仅由一个反演中心组成,因此将一层翻转(即绕面内轴进行C2旋转)不是一种对称操作,而是会反转两个不等价面内结晶轴之间夹角的符号。因此,给定的一层可以以两种对称不等价(但能量上相似)的方式放置在衬底上。这对在TMD异质结构中利用这些材料的各向异性特性有影响,并且预计会在大面积层生长中导致一种新的畴结构来源。我们通过微机械劈裂制备了具有可控“上”或“下”取向的少层ReS2和ReSe2样品,并且展示了偏振拉曼显微镜如何用于区分这两种取向,从而确立拉曼作为表征大面积层的重要工具。

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