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钴(II)单离子磁体中磁化强度的零场慢弛豫:通过调整分子间磁耦合抑制磁化强度的量子隧穿

Zero-field slow relaxation of magnetization in cobalt(ii) single-ion magnets: suppression of quantum tunneling of magnetization by tailoring the intermolecular magnetic coupling.

作者信息

Mitsuhashi Ryoji, Hosoya Satoshi, Suzuki Takayoshi, Sunatsuki Yukinari, Sakiyama Hiroshi, Mikuriya Masahiro

机构信息

Institute of Liberal Arts and Science, Kanazawa University Kakuma Kanazawa Ishikawa 920-1192 Japan

School of Science and Technology, Kwansei Gakuin University 2-1 Gakuen Sanda Hyogo 669-1337 Japan.

出版信息

RSC Adv. 2020 Dec 9;10(71):43472-43479. doi: 10.1039/d0ra08286d. eCollection 2020 Nov 27.

Abstract

The correlation between magnetic relaxation dynamics and the alignment of single-ion magnets (SIMs) in a crystal was investigated using four analogous cobalt(ii) complexes with unique hydrogen-bond networks. The hydrogen-bonding interactions in the crystals resulted in a relatively short intermolecular Co⋯Co distance, which led to non-zero intermolecular magnetic coupling. All the complexes with a Co⋯Co distance shorter than 6.5 Å exhibited zero-field slow magnetic relaxation as weak magnetic interactions split the ground ±M levels and suppressed quantum tunneling of magnetization (QTM). In particular, antiferromagnetically coupled one-dimensional chain SIM networks effectively suppressed QTM when the two intrachain Co⋯Co distances were non-equivalent. However, when the two distances in a chain were equivalent and each molecular symmetry axis aligned parallell within the chain, QTM suppression was insufficient because magnetic coupling from the adjacent molecules was virtually cancelled. Partial substitution of the Co ion with the diamagnetic Zn ion up to 33% for this complex resulted in complete QTM suppression in the absence of an external field. These results show that the manipulation of intermolecular distances and alignments is effective for suppressing undesired QTM events in SIMs.

摘要

利用具有独特氢键网络的四种类似钴(II)配合物,研究了磁弛豫动力学与晶体中单离子磁体(SIMs)排列之间的相关性。晶体中的氢键相互作用导致分子间Co⋯Co距离相对较短,从而产生非零的分子间磁耦合。所有Co⋯Co距离小于6.5 Å的配合物都表现出零场慢磁弛豫,因为弱磁相互作用分裂了基态±M能级并抑制了磁化量子隧穿(QTM)。特别是,当链内两个Co⋯Co距离不等价时,反铁磁耦合的一维链SIM网络有效地抑制了QTM。然而,当链内两个距离相等且每个分子对称轴在链内平行排列时,QTM抑制不足,因为相邻分子的磁耦合实际上被抵消了。用抗磁性的Zn离子对该配合物进行高达33%的部分取代,在没有外场的情况下导致QTM完全抑制。这些结果表明,分子间距离和排列的调控对于抑制SIMs中不期望的QTM事件是有效的。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dda5/9058397/1ce5a0021177/d0ra08286d-s1.jpg

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