在掺钐的铋铁氧体薄膜沉积温度方面的有效掺杂控制。

Effective doping control in Sm-doped BiFeO thin films deposition temperature.

作者信息

Wang Han, Huang Jijie, Sun Xing, Jian Jie, Liu Juncheng, Wang Haiyan

机构信息

School of Materials Engineering, Purdue University West Lafayette IN 47907 USA

School of Electrical and Computer Engineering, Purdue University West Lafayette IN 47907 USA.

出版信息

RSC Adv. 2020 Nov 4;10(66):40229-40233. doi: 10.1039/d0ra06775j. eCollection 2020 Nov 2.

DOI:10.1039/d0ra06775j

PMID:35520854

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9057518/

Abstract

Sm-doped BiFeO (BiSmFeO, or BSFO) thin films were fabricated on (001) SrTiO(STO) substrates by pulsed laser deposition (PLD) over a range of deposition temperatures (600 °C, 640 °C and 670 °C). Detailed analysis of their microstructure X-ray diffraction (XRD) and transmission electron microscopy (TEM) shows the deposition temperature dependence of ferroelectric (FE) and antiferroelectric (AFE) phase formation in BSFO. The Sm dopants are clearly detected by high-resolution scanning transmission electron microscopy (HR-STEM) and prove effective in controlling the ferroelectric properties of BSFO. The BSFO ( = 670 °C) presents larger remnant polarization (Pr) than the other two BSFO ( = 600 °C, 640 °C) and pure BiFeO (BFO) thin films. This study paves a simple way for enhancing the ferroelectric properties of BSFO deposition temperature and further promoting BFO practical applications.

摘要

通过脉冲激光沉积（PLD）在一系列沉积温度（600°C、640°C和670°C）下，在（001）SrTiO（STO）衬底上制备了掺钐的BiFeO（BiSmFeO，或BSFO）薄膜。对其微观结构进行详细分析，通过X射线衍射（XRD）和透射电子显微镜（TEM）表明，BSFO中铁电（FE）和反铁电（AFE）相的形成与沉积温度有关。通过高分辨率扫描透射电子显微镜（HR-STEM）能清晰检测到钐掺杂剂，且证明其对控制BSFO的铁电性能有效。与另外两种BSFO（=600°C、640°C）以及纯BiFeO（BFO）薄膜相比，BSFO（=670°C）呈现出更大的剩余极化（Pr）。本研究为通过沉积温度增强BSFO的铁电性能以及进一步推动BFO的实际应用铺平了一条简单的道路。